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In this paper, the slow-scale bifurcation phenomenon of the one-cycle-controlled three-level Boost power factor correction (PFC) converter is studied in depth, aiming at analyzing the influence of main circuit parameters on the stability of the system based on Floquet multiplier method. Firstly, the working principle of the circuit is analyzed, and a simplified model is derived according to the power balance principle. The periodic solutions are investigated using the harmonic balance method, and its stability is studied by the Floquet theory. By calculating the Floquet multiplier, the influence of the voltage compensator resistor Rvf on the slow-scale behavior of the system is analyzed. The simulation result verifies the correctness of the simplified model and theoratical analysis. Finally, the stability boundary composed of filter capacitor C and load resistor R as well as feedback resistor Rvf and capacitor Cvf is calculated and simulated under certain conditions. The circuit simulation result is consistent with the theoretical calculation. The results show that the correct choice of circuit parameters of three-level Boost PFC converter is very important for achieving its stable operation and improving the power factor.
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Keywords:
- one-cycle control /
- three-level Boost power factor correction converter /
- slow-scale bifurcation /
- Floquet multiplier
[1] Wang F Q, Ma X K 2013 Chin. Phys. B 22 120504
[2] Yang N N, Liu C X, Wu C J 2012 Chin. Phys. B 21 080503
[3] Orabi M, Ninomiya T 2002 IEEE 2002 28th Annual Conference of the Industrial Electronics Society 1 209
[4] Tse C K, Drange O, Iu H H C 2003 Proceedings of the 2003 International Symposium on Circuits and Systems Bangkok, Thailand, May 25-28, 2003 p312
[5] Wong S C, Tse C K, Orabi M, Ninomiya T 2006 IEEE Trans. Circuits Sys. I 53 454
[6] Chu G, Tse C K, Wong S C 2009 IEEE Trans. Power Electron. 24 469
[7] Aroudi A E, Orabi M, Haroun R, Martínez-Salamero L 2011 IEEE Trans. Ind. Electron. 58 3448
[8] Zhang H, Ma X K, Xue B L, Liu W Z 2005 Chaos Soliton. Fract. 23 431
[9] Zou J L, Ma X K 2008 Proc. CSEE 28 38 (in Chinese) [邹建龙, 马西奎 2008 中国电机工程学报 28 38]
[10] Cheng W B, Kang S M, Wang Y L, Tang N, Guo Y N, Huo A Q 2011 Acta Phys. Sin. 60 020506 (in Chinese) [程为彬, 康思民, 汪跃龙, 汤楠, 郭颖娜, 霍爱清 2011 物理学报 60 020506]
[11] Zou J L, Ma X K, Yang Y 2010 Proc. CSEE 30 1 (in Chinese) [邹建龙, 马西奎, 杨宇 2010 中国电机工程学报 30 1]
[12] Ma W 2011 Ph. D. Dissertation (Chongqing: Chongqing University) (in Chinese) [马伟 2011 博士学位论文 (重庆: 重庆大学)]
[13] Zhang Y, Zhang H, Ma X K 2010 Acta Phys. Sin. 59 8432 (in Chinese) [张源, 张浩, 马西奎 2010 物理学报 59 8432]
[14] Wu X Q, Tse C K, Wong S C, Lu J N 2006 Int. J. Circuit Theory Appl. 34 341
[15] Wu X Q, Tse C K, Dranga O, Lu J N 2006 IEEE Trans. Circuits Sys. I 53 204
[16] Dai D, Li S N, Ma X K, Tse C K 2007 IEEE Trans. Circuits Sys. I 54 1724
[17] Zou J L, Ma X K 2010 Acta Phys. Sin. 59 3794 (in Chinese) [邹建龙, 马西奎 2010 物理学报 59 3794]
[18] Zhang M T, Jiang Y, Lee F C, Jovanovic M M 1995 Applied Power Electronics Conference and Exposition Dallas, USA, March 5-9, 1995 p434
[19] Wang L B, Zhang C 2006 Power Electron. 40 15 (in Chinese) [王林兵, 张超 2006 电力电子技术 40 15]
[20] Balestero J P R, Tofoli F L, Fernandes R C, Torrico-Bascopé G V, Mendes de Seixas F J 2012 IEEE Trans. Ind. Electron. 59 1565
[21] Sun L, Hu G H, Sun D J, Yin X Y 2001 Acta Mech. Sin. 33 309 (in Chinese) [孙亮, 胡国辉, 孙德军, 尹协远 2001 力学学报 33 309]
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[1] Wang F Q, Ma X K 2013 Chin. Phys. B 22 120504
[2] Yang N N, Liu C X, Wu C J 2012 Chin. Phys. B 21 080503
[3] Orabi M, Ninomiya T 2002 IEEE 2002 28th Annual Conference of the Industrial Electronics Society 1 209
[4] Tse C K, Drange O, Iu H H C 2003 Proceedings of the 2003 International Symposium on Circuits and Systems Bangkok, Thailand, May 25-28, 2003 p312
[5] Wong S C, Tse C K, Orabi M, Ninomiya T 2006 IEEE Trans. Circuits Sys. I 53 454
[6] Chu G, Tse C K, Wong S C 2009 IEEE Trans. Power Electron. 24 469
[7] Aroudi A E, Orabi M, Haroun R, Martínez-Salamero L 2011 IEEE Trans. Ind. Electron. 58 3448
[8] Zhang H, Ma X K, Xue B L, Liu W Z 2005 Chaos Soliton. Fract. 23 431
[9] Zou J L, Ma X K 2008 Proc. CSEE 28 38 (in Chinese) [邹建龙, 马西奎 2008 中国电机工程学报 28 38]
[10] Cheng W B, Kang S M, Wang Y L, Tang N, Guo Y N, Huo A Q 2011 Acta Phys. Sin. 60 020506 (in Chinese) [程为彬, 康思民, 汪跃龙, 汤楠, 郭颖娜, 霍爱清 2011 物理学报 60 020506]
[11] Zou J L, Ma X K, Yang Y 2010 Proc. CSEE 30 1 (in Chinese) [邹建龙, 马西奎, 杨宇 2010 中国电机工程学报 30 1]
[12] Ma W 2011 Ph. D. Dissertation (Chongqing: Chongqing University) (in Chinese) [马伟 2011 博士学位论文 (重庆: 重庆大学)]
[13] Zhang Y, Zhang H, Ma X K 2010 Acta Phys. Sin. 59 8432 (in Chinese) [张源, 张浩, 马西奎 2010 物理学报 59 8432]
[14] Wu X Q, Tse C K, Wong S C, Lu J N 2006 Int. J. Circuit Theory Appl. 34 341
[15] Wu X Q, Tse C K, Dranga O, Lu J N 2006 IEEE Trans. Circuits Sys. I 53 204
[16] Dai D, Li S N, Ma X K, Tse C K 2007 IEEE Trans. Circuits Sys. I 54 1724
[17] Zou J L, Ma X K 2010 Acta Phys. Sin. 59 3794 (in Chinese) [邹建龙, 马西奎 2010 物理学报 59 3794]
[18] Zhang M T, Jiang Y, Lee F C, Jovanovic M M 1995 Applied Power Electronics Conference and Exposition Dallas, USA, March 5-9, 1995 p434
[19] Wang L B, Zhang C 2006 Power Electron. 40 15 (in Chinese) [王林兵, 张超 2006 电力电子技术 40 15]
[20] Balestero J P R, Tofoli F L, Fernandes R C, Torrico-Bascopé G V, Mendes de Seixas F J 2012 IEEE Trans. Ind. Electron. 59 1565
[21] Sun L, Hu G H, Sun D J, Yin X Y 2001 Acta Mech. Sin. 33 309 (in Chinese) [孙亮, 胡国辉, 孙德军, 尹协远 2001 力学学报 33 309]
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