Vol. 20, No. 6 (1964)
1964-03-20
CONTENT
1964, 20 (6): 483-500.
doi: 10.7498/aps.20.483
Abstract +
In this paper, the properties of the SU3 wave functions, introduced by Elliott in 1958, are discussed in some detail. By means of the commutation relations of the infinitesimal operators of SU3 group, the internal wave functions x(α(λμ))K) can be calculated in a comparatively simple manner. With the use of the internal wave functions x(α(λμ))K), a formula of the fractional parentage coefficients for the SU3 wave functions Ψ(α(λμ))KLM) is obtained. As examples the SU3 wave functions of 2 or 3 nucleons in sd shell are calculated.
1964, 20 (6): 501-511.
doi: 10.7498/aps.20.501
Abstract +
After a general consideration for the process of π+-photoproduction from proton, starting from the Mandelstam representation and using further the Cini-Fubini approximation, we derive the formulas for the isoscalar part of π-photoproduction amplitudes. According to new data on electromagnetic structure of nucleon, we choose the parameters of I=I=1 resonance of π-π interaction to be tr = 22, av= 1.52, bv= 1.60, and calculate (dσ)/(dΩ)(90°),(dσ‖)/(dσ⊥)(90°) and angular distributions at three energies. The results show that after introducing the π-π interaction the fit to the experiment is much improved over the results obtained by Chew et al. The coupling constant of γ+π→π + π is determined to be about ∧≈- 2.8 e, which is roughly consistent with the current results.
1964, 20 (6): 518-527.
doi: 10.7498/aps.20.518
Abstract +
Recently the magnetic field on the surface of an elliptical cylinder carrying d. c. current has been found. In this paper, we solve the problem of a conductor of some cross-sectional form carrying d. c. current in a uniform magnetic field by changing the contour of the cross section of the conductor to a coordinate line obtained by conformal transformation from the rectangular coordinates.
1964, 20 (6): 540-549.
doi: 10.7498/aps.20.540
Abstract +
The present analysis is an extension of previous work by the authors, in which the ordinary single diffused structure is only a limiting case where a→∞. Example of the analysis applied to silicon with phosphorus and boron as diffusants has been given. It is indicated that the double diffusion technique is the most effective one for increasing the cutoff frequency of parametric diode.
