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本文研究了以分子束外延硅为超薄n区的pn结的C-V特性,推导了当该结的耗尽区扩展到外延层边缘后的C-2-V关系。据此,由实验可求出非故意掺杂的硅分子束外延层的杂质浓度为8.0×1014cm-3。从而建立起一种测量超薄分子束外延层掺杂浓度的新方法。The C-V characteristic of a silicon p-n diode grown by molecular beam epitaxy (MBE) technique was carefully studied in the case that the space charge region reached the edge of MBE layer. Based on the theoretical analysis and experimental measurement, the impurity concentration in unintentionally doped n-type MBE layer was determined to be 8.0×1014cm-3. This method is shown to be a new way to find out impurity concentrations in supper-thin semiconductor layers.
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