Influences of deposition rate and oxygen partial pressure on residual stress of HfO<sub>2</sub> films
Acta Physica Sinica
Citation Search Quick Search
Acta Phys. Sin.  2009, Vol. 58 Issue (10): 7025-7029    
CLASSICAL AREA OF PHENOMENOLOGY Current Issue| Next Issue| Archive| Adv Search  |   
Influences of deposition rate and oxygen partial pressure on residual stress of HfO2 films
Cen Min1, Zhang Yue-Guang2, Chen Wei-Lan2, Gu Pei-Fu2
(1)复旦大学电光源与照明工程学系,上海 200433; (2)浙江大学现代光学仪器国家重点实验室,杭州 310027
Copyright © Acta Physica Sinica
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China
Tel: 010-82649294,82649829,82649863   E-mail: aps8@iphy.ac.cn