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Residual stress measurement of porous silicon thin film by substrate curvature method

Hu Ming Di Yu-Xian Ji Xin-Hua Qin Yu-Wen Chen Jin-Long

Residual stress measurement of porous silicon thin film by substrate curvature method

Hu Ming, Di Yu-Xian, Ji Xin-Hua, Qin Yu-Wen, Chen Jin-Long
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  • Abstract views:  3966
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  • Received Date:  23 November 2005
  • Accepted Date:  15 December 2005
  • Published Online:  20 October 2006

Residual stress measurement of porous silicon thin film by substrate curvature method

  • 1. (1)天津大学电信学院电子科学与技术系,天津 300072; (2)天津大学机械工程学院力学系,天津 300072

Abstract: An optical apparatus based on substrate curvature method was developed for stress measurement of thin films, which offeres such advantages as overall field, non-contact, high precision, nondestructive, easy operation and quick response. Using the apparatus, the residual stress in porous silicon (PS) layers prepared by electrochemical etching using a solution of HF/ethanol with composition ratio of 1∶1 on heavily or gently doped (100) silicon as a function of the electric current density were obtained. It is found that the residual tensile stress tends to increase with the porosity increasing and the doping concentration of the silicon wafer increasing. The results show that there is a deep connection between the micro-structure PS and the residual stress distribution.

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