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物理学报. 2005, 54(1): 416-421.
doi: 10.7498/aps.54.416.
声空化物理化学综合法制备发光多孔硅薄膜的微结构与发光特性
- 收稿日期: 2004-03-04
- 修回日期: 2004-04-09
- 刊出日期: 2005-01-19
English Abstract
The microstructure and characteristics of luminescent porous silicon film prepared by the physicochemical sonic-vacating method
- Received Date:
04 March 2004
- Accepted Date:
09 April 2004
- Published Online:
19 January 2005
Abstract: The special physicochemical environment caused by sonic_vacating provides an important outlet for the preparation of highly efficient luminescent porous silicon films.Experimental results show that sonic_chemical treatment is an effective t echnology for the improvement of the microstructure of porous silicon,and the luminescent efficiency and stability thereof.Luminescent porous silicon films,prep ared by ultrasonic-enhanced anode electrochemical etching,display better qualiti es than the samples prepared by conventionai methods widely used at present.This ultrasonic_chemical effect roots in sonic_vacating,i.e. the generation,formatio n and rapid collapse of bubbles in the etching solution.In the process of the po rous silicon being etched,the escape rate and caving_in of hydrogen bubbles in t he pores is increased as a result of the work of the ultrasonic waves,which is h elpful to the vertical etching of the pores.
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