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Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy

Jiang Yang Luo Yi Xi Guang-Yi Wang Lai Li Hong-Tao Zhao Wei Han Yan-Jun

Citation:

Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy

Jiang Yang, Luo Yi, Xi Guang-Yi, Wang Lai, Li Hong-Tao, Zhao Wei, Han Yan-Jun
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  • Abstract views:  6892
  • PDF Downloads:  995
  • Cited By: 0
Publishing process
  • Received Date:  25 December 2008
  • Accepted Date:  13 January 2009
  • Published Online:  05 May 2009

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