| [1] |
Zhao Jian-Cheng, Wu Chao-Xing, Guo Tai-Liang. Carrier transport model of non-carrier-injection light-emitting diode. Acta Physica Sinica,
2023, 72(4): 048503.
doi: 10.7498/aps.72.20221831
|
| [2] |
Wu Jia-Long, Dou Yong-Jiang, Zhang Jian-Feng, Wang Hao-Ran, Yang Xu-Yong. Perovskite light-emitting diodes based on solution-processed metal-doped nickel oxide hole injection layer. Acta Physica Sinica,
2020, 69(1): 018101.
doi: 10.7498/aps.69.20191269
|
| [3] |
Wang Dang-Hui, Xu Tian-Han. Low-frequency generation-recombination noise behaviors of blue/violet-light-emitting diode. Acta Physica Sinica,
2019, 68(12): 128104.
doi: 10.7498/aps.68.20190189
|
| [4] |
Qu Zi-Han, Chu Ze-Ma, Zhang Xing-Wang, You Jing-Bi. Research progress of efficient green perovskite light emitting diodes. Acta Physica Sinica,
2019, 68(15): 158504.
doi: 10.7498/aps.68.20190647
|
| [5] |
Li Zhen-Chao, Chen Zi-Ming, Zou Guang-Rui-Xing, Yip Hin-Lap, Cao Yong. Applications of organic additives in metal halide perovskite light-emitting diodes. Acta Physica Sinica,
2019, 68(15): 158505.
doi: 10.7498/aps.68.20190307
|
| [6] |
Zhou Guang-Zheng, Yao Shun, Yu Hong-Yan, Lü Zhao-Chen, Wang Qing, Zhou Tian-Bao, Li Ying, Lan Tian, Xia Yu, Lang Lu-Guang, Cheng Li-Wen, Dong Guo-Liang, Kang Lian-Hong, Wang Zhi-Yong. Optimized design and epitaxy growth of high speed 850 nm vertical-cavity surface-emitting lasers. Acta Physica Sinica,
2018, 67(10): 104205.
doi: 10.7498/aps.67.20172550
|
| [7] |
Jia Bo-Lun, Deng Ling-Ling, Chen Ruo-Xi, Zhang Ya-Nan, Fang Xu-Min. Numerical research of emission properties of localized surface plasmon resonance enhanced light-emitting diodes based on Ag@SiO2 nanoparticles. Acta Physica Sinica,
2017, 66(23): 237801.
doi: 10.7498/aps.66.237801
|
| [8] |
Wang Dang-Hui, Xu Tian-Han, Wang Rong, Luo She-Ji, Yao Ting-Zhen. Research on emission transition mechanisms of InGaN/GaN multiple quantum well light-emitting diodes using low-frequency current noise. Acta Physica Sinica,
2015, 64(5): 050701.
doi: 10.7498/aps.64.050701
|
| [9] |
Chen Wei-Chao, Tang Hui-Li, Luo Ping, Ma Wei-Wei, Xu Xiao-Dong, Qian Xiao-Bo, Jiang Da-Peng, Wu Feng, Wang Jing-Ya, Xu Jun. Research progress of substrate materials used for GaN-Based light emitting diodes. Acta Physica Sinica,
2014, 63(6): 068103.
doi: 10.7498/aps.63.068103
|
| [10] |
Gao Hui, Kong Fan-Min, Li Kang, Chen Xin-Lian, Ding Qing-An, Sun Jing. Structural optimization of GaN blue light LED with double layers of photonic crystals. Acta Physica Sinica,
2012, 61(12): 127807.
doi: 10.7498/aps.61.127807
|
| [11] |
Yue Qing-Yang, Kong Fan-Min, Li Kang, Zhao Jia. Study on the light extraction efficiency of GaN-based light emitting diode by using the defects of the photonic crystals. Acta Physica Sinica,
2012, 61(20): 208502.
doi: 10.7498/aps.61.208502
|
| [12] |
Tang Yi-Dan, Shen Guang-Di, Guo Xia, Guan Bao-Lu, Jiang Wen-Jing, Han Jin-Ru. High performance resonant cavity light emitting diode with dielectric distributed Bragg reflectors. Acta Physica Sinica,
2012, 61(1): 018503.
doi: 10.7498/aps.61.018503
|
| [13] |
Li Yan, Fu Hai-Wei, Shao Min, Li Xiao-Li. Temperature characteristic of photonic crystals resonant cavitycomposed of GaAs pillars with graphite lattice. Acta Physica Sinica,
2011, 60(7): 074219.
doi: 10.7498/aps.60.074219
|
| [14] |
Zhu Li-Hong, Cai Jia-Fa, Li Xiao-Ying, Deng Biao, Liu Bao-Lin. Luminous performance improvement of InGaN/GaN light-emitting diodes by modulating In content in well layers. Acta Physica Sinica,
2010, 59(7): 4996-5001.
doi: 10.7498/aps.59.4996
|
| [15] |
Li Wei-Jun, Zhang Bo, Xu Wen-Lan, Lu Wei. Experimental and theoretical study of blue InGaN/GaN multiple quantum well blue light-emitting diodes. Acta Physica Sinica,
2009, 58(5): 3421-3426.
doi: 10.7498/aps.58.3421
|
| [16] |
Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao. Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica,
2009, 58(10): 7189-7193.
doi: 10.7498/aps.58.7189
|
| [17] |
Shen Guang-Di, Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling. Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes. Acta Physica Sinica,
2008, 57(1): 472-476.
doi: 10.7498/aps.57.472
|
| [18] |
Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling, Shen Guang-Di. Effects of optimized contact scheme on the performance of high-power GaN-based light-emitting diodes. Acta Physica Sinica,
2007, 56(10): 6003-6007.
doi: 10.7498/aps.56.6003
|
| [19] |
Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang. Noise as a representation for reliability of light emitting diode. Acta Physica Sinica,
2006, 55(3): 1384-1389.
doi: 10.7498/aps.55.1384
|
| [20] |
Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di. Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica,
2006, 55(3): 1424-1429.
doi: 10.7498/aps.55.1424
|
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