In组分渐变提高InGaN/GaN多量子阱发光二极管发光性能

朱丽虹; 蔡加法; 李晓莹; 邓彪; 刘宝林

doi:10.7498/aps.59.4996

摘要

利用金属有机物化学气相沉积系统在蓝宝石衬底上通过有源层的变温生长,得到In组分渐变的量子阱结构,从而获得具有三角形能带结构的InGaN/GaN多量子阱发光二极管(LED)(简称三角形量子阱结构LED).变温光致发光谱结果表明,相对于传统具有方形能带结构的量子阱LED(简称方形量子阱结构LED),三角形量子阱结构有效提高了量子阱中电子和空穴波函数的空间交叠,从而增加了LED的内量子效率;电致发光谱结果表明,三角形量子阱结构LED器件与传统结构LED器件相比,明显改善了发光峰值波长随着电流的蓝移现象.通过以上

关键词:

Abstract

InGaN/GaN triangular shaped multiple quantum wells (MQWs) grown on sapphire substrate were adopted as an active layer of light-emitting diodes (LEDs) by modulating In content in well layers. The temperature dependence of the normalized integrated photoluminescence (PL) intensity showed that the overlap of the electron and hole wave-functions of the LEDs with triangular shaped MQW is much higher than that of the LEDs with conventional rectangular MQW structures, which improves the internal quantum efficiency (IQE) to a certain degree. On the other hand, it was found that the blue shift of the peak energy as a function of injection current is improved for the device with triangular shaped MQW structure from the electroluminescence (EL) spectra of the two series devices. The comparison above indicates that the triangular MQW LEDs are more efficient and more stable.

Keywords:

metal organic chemical vapor deposition /
InGaN/GaN multiple quantum wells /
light-emitting diode /
internal quantum efficiency

作者及机构信息

1.
厦门大学物理系,厦门 361005

基金项目: 国家自然科学基金(批准号:60276029)和国家高技术研究发展计划(批准号:2004AA311020,2006AA03Z409)资助的课题.

Authors and contacts

1.
Department of Physics, Xiamen University, Xiamen 361005, China

参考文献

[1]	Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y, Kozaki T, Umemoto H, Sano M, Chocho K 1997 Jpn. J. Appl. Phys. 36 L1568
[2]	Crowell P A, Yong D K, Keller S, Hu E L, Awschalom D D 1998 Appl. Phys. Lett. 72 927
[3]	Chichibu S, Azuhata T, Sota T, Nakamura S 1996 Appl. Phys. Lett. 69 4188
[4]	Narukawa Y, Kawakami Y, Fujita S, Fujita S, Nakamura S 1997 Phys. Rev. B 55 R1938
[5]	Li W J, Zhang B, Xu W L, Lu W 2009 Acta Phys. Sin. 58 3421 (in Chinese) [李为军、张波、徐文兰、陆卫 2009 物理学报 58 3421]
[6]	Hangleiter A 2000 J. Lumin. 87—89 130
[7]	Kim M H, Schubert M F, Dai Q, Kin J K, Schubert E F, Piperk J, Park Y 2007 Appl.Phys.Lett. 91 183507
[8]	Craven M D, Lim S H, Wu F, Speck J S, DenBaars S P 2002 Appl. Phys. Lett. 81 469
[9]	Craven M D, Chakraborty A, Imer B, Wu F, Keller S, Mishra U K, Speck J S, DenBaars S P 2003 Phys. Stat. Sol. (c) 0 2132
[10]	Hellman E S, Liliental-Weber Z, Buchanan D N E 1997 MRS Internet J. Nitride Semicond. Res. 2 30
[11]	Schmidt M C, Kim K C, Farrell R M, Feezell D F, Cohen D A, Saito M, Fujito K, Speck J S, Denbaars S P, Nakamura S 2007 Jpn. J. Appl. Phys. 46 190
[12]	Xing Y H, Deng J, Han J, Li J J, Shen G D 2009 Acta Phys. Sin. 58 590 (in Chinese) [邢艳辉、邓军、韩军、李建军、沈光地 2009 物理学报 58 590]
[13]	Xing Y H, Han J, Liu J P, Deng J, Niu N H, Shen G D 2007 Acta Phys. Sin. 56 7295 (in Chinese) [邢艳辉、韩军、刘建平、邓军、牛南辉、沈光地 2007 物理学报 56 7295]
[14]	Choi R J, Hahn Y B, Shim H W 2003 Appl. Phys. Lett. 82 2764
[15]	Zhu L H, Liu B L 2009 Sol. St. Electr. 53 336
[16]	Wang T C, Ko T S, Lu T C, Kuo H C, Gao R C, Tasy J D, Wang S C 2008 Phys. Stat. Sol. (c) 5 2158

施引文献

[1]	Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y, Kozaki T, Umemoto H, Sano M, Chocho K 1997 Jpn. J. Appl. Phys. 36 L1568
[2]	Crowell P A, Yong D K, Keller S, Hu E L, Awschalom D D 1998 Appl. Phys. Lett. 72 927
[3]	Chichibu S, Azuhata T, Sota T, Nakamura S 1996 Appl. Phys. Lett. 69 4188
[4]	Narukawa Y, Kawakami Y, Fujita S, Fujita S, Nakamura S 1997 Phys. Rev. B 55 R1938
[5]	Li W J, Zhang B, Xu W L, Lu W 2009 Acta Phys. Sin. 58 3421 (in Chinese) [李为军、张波、徐文兰、陆卫 2009 物理学报 58 3421]
[6]	Hangleiter A 2000 J. Lumin. 87—89 130
[7]	Kim M H, Schubert M F, Dai Q, Kin J K, Schubert E F, Piperk J, Park Y 2007 Appl.Phys.Lett. 91 183507
[8]	Craven M D, Lim S H, Wu F, Speck J S, DenBaars S P 2002 Appl. Phys. Lett. 81 469
[9]	Craven M D, Chakraborty A, Imer B, Wu F, Keller S, Mishra U K, Speck J S, DenBaars S P 2003 Phys. Stat. Sol. (c) 0 2132
[10]	Hellman E S, Liliental-Weber Z, Buchanan D N E 1997 MRS Internet J. Nitride Semicond. Res. 2 30
[11]	Schmidt M C, Kim K C, Farrell R M, Feezell D F, Cohen D A, Saito M, Fujito K, Speck J S, Denbaars S P, Nakamura S 2007 Jpn. J. Appl. Phys. 46 190
[12]	Xing Y H, Deng J, Han J, Li J J, Shen G D 2009 Acta Phys. Sin. 58 590 (in Chinese) [邢艳辉、邓军、韩军、李建军、沈光地 2009 物理学报 58 590]
[13]	Xing Y H, Han J, Liu J P, Deng J, Niu N H, Shen G D 2007 Acta Phys. Sin. 56 7295 (in Chinese) [邢艳辉、韩军、刘建平、邓军、牛南辉、沈光地 2007 物理学报 56 7295]
[14]	Choi R J, Hahn Y B, Shim H W 2003 Appl. Phys. Lett. 82 2764
[15]	Zhu L H, Liu B L 2009 Sol. St. Electr. 53 336
[16]	Wang T C, Ko T S, Lu T C, Kuo H C, Gao R C, Tasy J D, Wang S C 2008 Phys. Stat. Sol. (c) 5 2158

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板