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Li-N dual-doped ZnO thin films were deposited on n-type Si(100) substrates with Sol-gel method. Then the deposited films were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that the films have polycrystalline wurtzite-structure and high c-axis preferred orientation. The analysis of the results of the deposited thin films tested in the Hall measurement at room temperature shows that these thin films have p-type electrical conductivity. The optimized results obtained at 15.0at% Li-N dual-doped concentration are 0.34 Ω·cm for the electrical resistivity，16.43 cm2/V·s for the Hall mobility and 2.79×1019 cm-3 for the hole concentration，respectively. The photoluminescence (PL) spectra show that the thin films have strong emission of near-ultraviolet (UV) and violet light. However，the defect-related deep level emission is weak in visible regions. The effects of Li-N dual-doping concentration and annealing temperature on the structural，optical and electrical properties are also discussed in this paper.
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Keywords:
- Li-N dual-doped /
- p-ZnO thin film /
- sol-gel /
- property
[1] ［1］Guo X L，Choi J H，Tabata H，Kawai T 2001 Jpn. J. Appl. Phys. 40 L177
[2] ［2］Sahay P P，Nath R K 2008 Sensors and Actuators B 134 654
[3] ［3］Li S T，Yang Y，Zhang L，Cheng P F 2009 Acta Phys. Sin. 58 2543 (in Chinese) ［李盛涛、杨雁、张乐、成鹏飞 2009 物理学报 58 2543］
[4] ［4］Chung J H，Lee J Y，Kim H S，Jang N W，Kim J H 2008 Thin Solid Films 516 5597
[5] ］Peng X D，Zhu T，Wang F W 2009 Acta Phys. Sin. 58 3274 (in Chinese) ［彭先德、朱涛、王芳卫 2009 物理学报 58 3274］
[6] ［6］Yang Y F，Long H，Yang G，Zheng Q G，Li Y H，Lu P X 2009 Acta Phys. Sin. 58 2785 (in Chinese) ［杨义发、龙华、杨光、郑启光、李玉华、陆培祥 2009 物理学报 58 2785］
[7] ［7］Van L H，Hong M H，Ding J 2008 J. Alloys Compd. 449 207
[8] ［8］Saw K G，Ibrahim K，Lim Y T，Chai M K 2007 Thin Solid Films. 515 2879
[9] ［9］Singh P，Chawla A K，Kaur D，Chandra R 2007 Materials Letters 61 2050
[10] ］Houng B，Hsi C S，Hou B Y，Fu S L 2008 J. Alloys Compd. 456 64
[11] ］Devy F C，Barreau N，Kessler J 2008 Thin Solid Films 516 7094
[12] ］Wang Y Z，Chu B L，He Q Y 2008 Vacuum 82 1229
[13] ］Chen Z Q，Liu M H，Liu Y P，Chen W，Luo Z Q，Hu X W 2009 Acta Phys. Sin. 58 4260 (in Chinese) ［陈兆权、刘明海、刘玉萍、陈伟、罗志清、胡希伟 2009 物理学报 58 4260］
[14] ］Chui X Z，Zhang T C，Mei Z X，Liu Z L，Liu Y P，Guo Y，Su X Y，Xue Q K，Du X L 2009 Acta Phys. Sin.58 309 (in Chinese) ［崔秀芝、张天冲、梅增霞、刘章龙、刘尧平、郭阳、苏希玉、薛其坤、杜小龙 2009 物理学报 58 309］
[15] ］Jiang Z W，Wang W X，Gao H C，Li H，He T，Yang C L，Chen H，Zhou J M 2009 Acta Phys. Sin. 58 471 (in Chinese) ［蒋中伟、王文新、高汉超、李辉、何涛、杨成良、陈弘、周均铭 2009 物理学报 58 471］
[16] ］Xu F，Lu Y，Xie Y，Liu Y F 2009 Vacuum 83 360
[17] ］Chakraborty A，Mondal T，Bera S K，Sen S K，Ghosh R，Paul G K 2008 Materials Chemistry and Physics 112 162
[18] ］Xue S W，Zu X T，Zhou W L，Deng H X，Xiang X，Zhang L，Deng H 2008 J. Alloys Compd. 448 21
[19] ］Tsay C Y，Cheng H C，Tung Y T，Tuan W H，Lin C K 2008 Thin Solid Films. 517 1032
[20] ］Hwangbo S，Lee Y J，Hwang K S 2008 Ceramics International 34 1237
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[1] ［1］Guo X L，Choi J H，Tabata H，Kawai T 2001 Jpn. J. Appl. Phys. 40 L177
[2] ［2］Sahay P P，Nath R K 2008 Sensors and Actuators B 134 654
[3] ［3］Li S T，Yang Y，Zhang L，Cheng P F 2009 Acta Phys. Sin. 58 2543 (in Chinese) ［李盛涛、杨雁、张乐、成鹏飞 2009 物理学报 58 2543］
[4] ［4］Chung J H，Lee J Y，Kim H S，Jang N W，Kim J H 2008 Thin Solid Films 516 5597
[5] ］Peng X D，Zhu T，Wang F W 2009 Acta Phys. Sin. 58 3274 (in Chinese) ［彭先德、朱涛、王芳卫 2009 物理学报 58 3274］
[6] ［6］Yang Y F，Long H，Yang G，Zheng Q G，Li Y H，Lu P X 2009 Acta Phys. Sin. 58 2785 (in Chinese) ［杨义发、龙华、杨光、郑启光、李玉华、陆培祥 2009 物理学报 58 2785］
[7] ［7］Van L H，Hong M H，Ding J 2008 J. Alloys Compd. 449 207
[8] ［8］Saw K G，Ibrahim K，Lim Y T，Chai M K 2007 Thin Solid Films. 515 2879
[9] ［9］Singh P，Chawla A K，Kaur D，Chandra R 2007 Materials Letters 61 2050
[10] ］Houng B，Hsi C S，Hou B Y，Fu S L 2008 J. Alloys Compd. 456 64
[11] ］Devy F C，Barreau N，Kessler J 2008 Thin Solid Films 516 7094
[12] ］Wang Y Z，Chu B L，He Q Y 2008 Vacuum 82 1229
[13] ］Chen Z Q，Liu M H，Liu Y P，Chen W，Luo Z Q，Hu X W 2009 Acta Phys. Sin. 58 4260 (in Chinese) ［陈兆权、刘明海、刘玉萍、陈伟、罗志清、胡希伟 2009 物理学报 58 4260］
[14] ］Chui X Z，Zhang T C，Mei Z X，Liu Z L，Liu Y P，Guo Y，Su X Y，Xue Q K，Du X L 2009 Acta Phys. Sin.58 309 (in Chinese) ［崔秀芝、张天冲、梅增霞、刘章龙、刘尧平、郭阳、苏希玉、薛其坤、杜小龙 2009 物理学报 58 309］
[15] ］Jiang Z W，Wang W X，Gao H C，Li H，He T，Yang C L，Chen H，Zhou J M 2009 Acta Phys. Sin. 58 471 (in Chinese) ［蒋中伟、王文新、高汉超、李辉、何涛、杨成良、陈弘、周均铭 2009 物理学报 58 471］
[16] ］Xu F，Lu Y，Xie Y，Liu Y F 2009 Vacuum 83 360
[17] ］Chakraborty A，Mondal T，Bera S K，Sen S K，Ghosh R，Paul G K 2008 Materials Chemistry and Physics 112 162
[18] ］Xue S W，Zu X T，Zhou W L，Deng H X，Xiang X，Zhang L，Deng H 2008 J. Alloys Compd. 448 21
[19] ］Tsay C Y，Cheng H C，Tung Y T，Tuan W H，Lin C K 2008 Thin Solid Films. 517 1032
[20] ］Hwangbo S，Lee Y J，Hwang K S 2008 Ceramics International 34 1237
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