Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

A collector space charge region model for SiGe HBT on thin-film SOI

Xu Xiao-Bo Zhang He-Ming Hu Hui-Yong Xu Li-Jun Ma Jian-Li

Citation:

A collector space charge region model for SiGe HBT on thin-film SOI

Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong, Xu Li-Jun, Ma Jian-Li
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

  • SiGe heterojunction bipolar transistor (HBT) on thin film SOI has been successfully integrated with SOI CMOS by "folded collector". This paper deals with the collector of "partially depleted transistor" according to the thin film vertical SiGe HBT structure. A simplified circuit model including vertical and horizontal resistors and depletion capacitance is presented for the first time, and the model of the collector for field, voltage, and depletion width is systematically established. The model is analyzed with reasonable parameters. The results indicate that the space charge region consists of intrinsic junction depletion and MOS capacitance depletion, that the width of the space charge region increases with doping concentration of the collector, larger reverse junction voltage, and smaller substrate voltage, and that the region features a vertical expansion followed by a lateral expansion. This space charge region model of collector provides a valuable reference to the SiGe mm-wave BiCMOS circuit design and simulation on thin film SOI.
    [1]

    Floyd B, Pfeiffer U, Reynolds S, Valdes-Garcia A, Haymes C, Katayama Y, Nakano D, Beukema T, Gaucher B, Soyuer M 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems SiRF07 Long Beach, CA, United states, 2007 p213

    [2]

    Fleetwood D M, Thome F V, Tsao S S, Dressendorfer P V, Dandini V J, Schwank J R 1988 IEEE Trans. Nucl. Sci. 35 1099

    [3]

    Shahidi G G 2002 IBM Journal of Research and Development 46 121

    [4]

    Shahidi G G, Ajmera A, Assaderaghi F, Bolam R J, Leobandung E, Rausch W, Sankus D, Schepis D, Wagner L F, Kun W, Davari B 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition, Piscataway, NJ, USA, Feb.15—17, 1999,p426

    [5]

    Larson L E 2000 International Electron Devices Meeting, Technical Digest. IEDM, San Francisco, CA, USA, Dec. 10—13, 2000 p737

    [6]

    Washio K, Ohue E, Shimamoto H, Oda K, Hayami R, Kiyota Y, Tanabe M, Kondo M, Hashimoto T, Harada, T 2002 IEEE Trans ED 49 271

    [7]

    Sato F, Hashimoto T, Tezuka H, Soda M, Suzaki T, Tatsumi T, Tashiro T 1999 IEEE Trans ED 46 1332

    [8]

    Cai J, Ajmera A, Ouyang Q Q, Oldiges P, Steigerwalt M, Stein K, Jenkins K, Shahidi G, Ning T H 2002 Symposium on VLSI Technology Digest of Technical Papers Honolulu, HI, United states, June 11—13, 2002 p172

    [9]

    Avenier G, Schwartzmann T, Chevalier P, Vandelle B, Rubaldo L, Dutartre D, Boissonnet L, Saguin F, Pantel R, Fregonese S, Maneux C, Zimmer T, Chantre A 2005 IEEE Bipolar/BiCMOS Circuits and Technol. Meeting Santa Barbara, CA, USA, October 9—11, 2005, p128.

    [10]

    Rücker H, Heinemann B, Barth R, Bolze D, Drews J, Fursenko O, Grabolla T, Haak U, Hppner W, Knoll D, Marschmeyer S, Mohapatra N, Richter H H, Schley P, Schmidt D, Tillack B, Weidner G, Wolansky D, Wulf H E, Yamamoto Y 2004 Technical Digest - International Electron Devices Meeting IEDM San Francisco CA, United states, Dec.13—15, 2004 p239

    [11]

    Ouyang Q Q, Cai J, Ning T, Oldiges P, Jeffery B J 2003 Proc. IEEE Bipolar/BiCMOS Circuits and Technol. Meeting BCTM Minneapolis, United states, Sep.29—Oct. 1,2002 p28

    [12]

    Cai J, Mahender K, Steigerwalt M, Ho H, Schonenberg K, Stein K, Chen H J, Jenkins K, Ouyang Q Q, Oldiges P, Ning T H 2003 Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM Toulouse, France, 2003 p215

    [13]

    Cai J, Ning T H 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings ICSICT Beijing, China, Oct. 18—21, 2004 p2102

    [14]

    Avenier G, Chevalier P, Vandelle B, Lenoble D, Saguin F, Frégonèse S, Zimmer T, Chantre A 2005 Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference Grenoble, France, Sep. 12—16, 2005 p133

    [15]

    Avenier G, Frégonè S, Chevalier P, Bustos J, Saguin F, Schwartzmann T, Maneux C, Zimmer T, Chantre A 2008 IEEE Transactions on Electron Devices 55 585

    [16]

    Avenier G, Diop M, Chevalier P, Troillard G, Loubet N, Bouvier J, Depoyan Linda, Derrier N, Buczko M, Leyris C, Boret S, Montusclat S, Margain A, Pruvost S, Nicolson S T, Yau K H K, Revil N, Gloria D, Dutartre D, Voinigescu S P, Chantre, A 2009 IEEE Journal of Solid-State Circuits 44 2312

    [17]

    Chen T B, Bellini M, Zhao E H, Comeau J P, Sutton A K, Grens C M, Cressler J D, Cai J, Ning T H 2005 Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM Santa Barbara, CA, USA, Oct. 9—11, 2005 p256

    [18]

    Bellini M, Cressler J D, Cai J 2007 Proc. IEEE Bipolar/ BiCMOS Circuits and Technology Meeting BCTM Boston MA, USA, Sep. 30—Oct.2, 2007 p234

    [19]

    Bellini M, Chen T B, Zhu C D, Cressler J D, Cai J 2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM Maastricht Netherlands Oct. 8—10 2006 p4

    [20]

    Chen T B, Sutton A K, Bellini M, Haugerud B M, Comeau J P, Liang Q Q, Cressler J D, Cai J, Ning T H, Marshall P W, Marshall C J 2005 IEEE Transactions on Nuclear Science 52 2353

    [21]

    Vanhoucke T, Boots H M J, Van Noort W D 2004 IEEE Electron Device Letters 25 150

    [22]

    Hu H Y, Zhang H M, Lü Y, Dai X Y, Hou H, Ou J F, Wang W, Wang X Y 2006 Acta Phys. Sin. 55 403 (in Chinese)[胡辉勇、张鹤鸣、吕 懿、戴显英、侯 慧、区健锋、王 伟、王喜媛 2006 物理学报 55 403]

    [23]

    Lü Y, Zhang H M, Dai X Y, Hu H Y, Shu B 2004 Acta Phys. Sin. 53 3239 (in Chinese)[吕 懿、张鹤鸣、戴显英、胡辉勇、舒 斌 2004 物理学报 53 3239]

    [24]

    Toorn R V, Paasschenss J C J, Kloosterman W J 2008 The Mextram Bipolar Transistor Model level 504.7, Mextram definition document , 2008 Delft University of Technology

    [25]

    Frégonè S, Avenier G, Maneux C, Chantre A 2006 IEEE Trans ED 53 296

    [26]

    Kirk C T 1962 IRE Trans. Electron Devices 9 164

    [27]

    Shi M, Wu G Y 2008 Semiconductor Device Physics (Xi'an: Xi'an Jiaotong University Press)p256—264(in Chinese)[施敏著 伍国珏译 2008 半导体器件物理(西安:西安交通大学出版社)第256—264页]

  • [1]

    Floyd B, Pfeiffer U, Reynolds S, Valdes-Garcia A, Haymes C, Katayama Y, Nakano D, Beukema T, Gaucher B, Soyuer M 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems SiRF07 Long Beach, CA, United states, 2007 p213

    [2]

    Fleetwood D M, Thome F V, Tsao S S, Dressendorfer P V, Dandini V J, Schwank J R 1988 IEEE Trans. Nucl. Sci. 35 1099

    [3]

    Shahidi G G 2002 IBM Journal of Research and Development 46 121

    [4]

    Shahidi G G, Ajmera A, Assaderaghi F, Bolam R J, Leobandung E, Rausch W, Sankus D, Schepis D, Wagner L F, Kun W, Davari B 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition, Piscataway, NJ, USA, Feb.15—17, 1999,p426

    [5]

    Larson L E 2000 International Electron Devices Meeting, Technical Digest. IEDM, San Francisco, CA, USA, Dec. 10—13, 2000 p737

    [6]

    Washio K, Ohue E, Shimamoto H, Oda K, Hayami R, Kiyota Y, Tanabe M, Kondo M, Hashimoto T, Harada, T 2002 IEEE Trans ED 49 271

    [7]

    Sato F, Hashimoto T, Tezuka H, Soda M, Suzaki T, Tatsumi T, Tashiro T 1999 IEEE Trans ED 46 1332

    [8]

    Cai J, Ajmera A, Ouyang Q Q, Oldiges P, Steigerwalt M, Stein K, Jenkins K, Shahidi G, Ning T H 2002 Symposium on VLSI Technology Digest of Technical Papers Honolulu, HI, United states, June 11—13, 2002 p172

    [9]

    Avenier G, Schwartzmann T, Chevalier P, Vandelle B, Rubaldo L, Dutartre D, Boissonnet L, Saguin F, Pantel R, Fregonese S, Maneux C, Zimmer T, Chantre A 2005 IEEE Bipolar/BiCMOS Circuits and Technol. Meeting Santa Barbara, CA, USA, October 9—11, 2005, p128.

    [10]

    Rücker H, Heinemann B, Barth R, Bolze D, Drews J, Fursenko O, Grabolla T, Haak U, Hppner W, Knoll D, Marschmeyer S, Mohapatra N, Richter H H, Schley P, Schmidt D, Tillack B, Weidner G, Wolansky D, Wulf H E, Yamamoto Y 2004 Technical Digest - International Electron Devices Meeting IEDM San Francisco CA, United states, Dec.13—15, 2004 p239

    [11]

    Ouyang Q Q, Cai J, Ning T, Oldiges P, Jeffery B J 2003 Proc. IEEE Bipolar/BiCMOS Circuits and Technol. Meeting BCTM Minneapolis, United states, Sep.29—Oct. 1,2002 p28

    [12]

    Cai J, Mahender K, Steigerwalt M, Ho H, Schonenberg K, Stein K, Chen H J, Jenkins K, Ouyang Q Q, Oldiges P, Ning T H 2003 Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM Toulouse, France, 2003 p215

    [13]

    Cai J, Ning T H 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings ICSICT Beijing, China, Oct. 18—21, 2004 p2102

    [14]

    Avenier G, Chevalier P, Vandelle B, Lenoble D, Saguin F, Frégonèse S, Zimmer T, Chantre A 2005 Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference Grenoble, France, Sep. 12—16, 2005 p133

    [15]

    Avenier G, Frégonè S, Chevalier P, Bustos J, Saguin F, Schwartzmann T, Maneux C, Zimmer T, Chantre A 2008 IEEE Transactions on Electron Devices 55 585

    [16]

    Avenier G, Diop M, Chevalier P, Troillard G, Loubet N, Bouvier J, Depoyan Linda, Derrier N, Buczko M, Leyris C, Boret S, Montusclat S, Margain A, Pruvost S, Nicolson S T, Yau K H K, Revil N, Gloria D, Dutartre D, Voinigescu S P, Chantre, A 2009 IEEE Journal of Solid-State Circuits 44 2312

    [17]

    Chen T B, Bellini M, Zhao E H, Comeau J P, Sutton A K, Grens C M, Cressler J D, Cai J, Ning T H 2005 Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM Santa Barbara, CA, USA, Oct. 9—11, 2005 p256

    [18]

    Bellini M, Cressler J D, Cai J 2007 Proc. IEEE Bipolar/ BiCMOS Circuits and Technology Meeting BCTM Boston MA, USA, Sep. 30—Oct.2, 2007 p234

    [19]

    Bellini M, Chen T B, Zhu C D, Cressler J D, Cai J 2006 IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM Maastricht Netherlands Oct. 8—10 2006 p4

    [20]

    Chen T B, Sutton A K, Bellini M, Haugerud B M, Comeau J P, Liang Q Q, Cressler J D, Cai J, Ning T H, Marshall P W, Marshall C J 2005 IEEE Transactions on Nuclear Science 52 2353

    [21]

    Vanhoucke T, Boots H M J, Van Noort W D 2004 IEEE Electron Device Letters 25 150

    [22]

    Hu H Y, Zhang H M, Lü Y, Dai X Y, Hou H, Ou J F, Wang W, Wang X Y 2006 Acta Phys. Sin. 55 403 (in Chinese)[胡辉勇、张鹤鸣、吕 懿、戴显英、侯 慧、区健锋、王 伟、王喜媛 2006 物理学报 55 403]

    [23]

    Lü Y, Zhang H M, Dai X Y, Hu H Y, Shu B 2004 Acta Phys. Sin. 53 3239 (in Chinese)[吕 懿、张鹤鸣、戴显英、胡辉勇、舒 斌 2004 物理学报 53 3239]

    [24]

    Toorn R V, Paasschenss J C J, Kloosterman W J 2008 The Mextram Bipolar Transistor Model level 504.7, Mextram definition document , 2008 Delft University of Technology

    [25]

    Frégonè S, Avenier G, Maneux C, Chantre A 2006 IEEE Trans ED 53 296

    [26]

    Kirk C T 1962 IRE Trans. Electron Devices 9 164

    [27]

    Shi M, Wu G Y 2008 Semiconductor Device Physics (Xi'an: Xi'an Jiaotong University Press)p256—264(in Chinese)[施敏著 伍国珏译 2008 半导体器件物理(西安:西安交通大学出版社)第256—264页]

  • [1] 3D Simulation Study on the Mechanism of Influence Factor of Total Dose Ionizing Effect on SiGe HBT. Acta Physica Sinica, 2021, (): . doi: 10.7498/aps.70.20211795
    [2] Lin Jian-Xiao, Wu Jiu-Hui, Liu Ai-Qun, Chen Zhe, Lei Hao. A nano-silicon-photonic switch driven by an optical gradient force. Acta Physica Sinica, 2015, 64(15): 154209. doi: 10.7498/aps.64.154209
    [3] Liu Jing, Wu Yu, Gao Yong. Research on SiGe heterojunction bipolar transistor with a trench-type emitter. Acta Physica Sinica, 2014, 63(14): 148503. doi: 10.7498/aps.63.148503
    [4] Song Jian-Jun, Yang Chao, Zhu He, Zhang He-Ming, Xuan Rong-Xi, Hu Hui-Yong, Shu Bin. Structure design and frequency characteristics of SOI SiGe HBT. Acta Physica Sinica, 2014, 63(11): 118501. doi: 10.7498/aps.63.118501
    [5] Zhang Yu-Jie, Zhang Wan-Rong, Jin Dong-Yue, Chen Liang, Fu Qiang, Guo Zhen-Jie, Xing Guang-Hui, Lu Zhi-Yi. Effects of Ge profile on thermal characteristics of SiGe heterojunction bipolar transistor with non-uniform doping profile in base region. Acta Physica Sinica, 2013, 62(3): 034401. doi: 10.7498/aps.62.034401
    [6] Zhang Bin, Yang Yin-Tang, Li Yue-Jin, Xu Xiao-Bo. Electrical behavior research of silicon-on-insulator SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2012, 61(23): 238502. doi: 10.7498/aps.61.238502
    [7] Qin Shan-Shan, Zhang He-Ming, Hu Hui-Yong, Qu Jiang-Tao, Wang Guan-Yu, Xiao Qing, Shu Yu. A two-dimensional subthreshold current model for fullydepleted strained-SOI MOSFET. Acta Physica Sinica, 2011, 60(5): 058501. doi: 10.7498/aps.60.058501
    [8] Hu Hui-Yong, Shu Yu, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Qing Shan-Shan, Qu Jiang-Tao. Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layer. Acta Physica Sinica, 2011, 60(1): 017303. doi: 10.7498/aps.60.017303
    [9] Xiao Ying, Zhang Wan-Rong, Jin Dong-Yue, Chen Liang, Wang Ren-Qing, Xie Hong-Yun. Effect of bandgap engineering on thermal characteristic of radiofrequency power SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2011, 60(4): 044402. doi: 10.7498/aps.60.044402
    [10] Yu Zong-Guang, Xiao Zhi-Qiang, Zhou Xin-Jie, Li Lei-Lei. Threshold voltage degradation mechanism of SOI SONOS EEPROM under total-dose irradiation. Acta Physica Sinica, 2011, 60(9): 098502. doi: 10.7498/aps.60.098502
    [11] Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong. Improved base-collector depletion charge and capacitance model for SiGe HBT on thin-film SOI. Acta Physica Sinica, 2011, 60(11): 118501. doi: 10.7498/aps.60.118501
    [12] Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo. Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectric. Acta Physica Sinica, 2010, 59(11): 8131-8136. doi: 10.7498/aps.59.8131
    [13] Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu, Cai Nai-Qiong. 2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectric. Acta Physica Sinica, 2008, 57(6): 3807-3812. doi: 10.7498/aps.57.3807
    [14] Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi. Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica, 2007, 56(6): 3504-3508. doi: 10.7498/aps.56.3504
    [15] Shu Bin, Zhang He-Ming, Zhu Guo-Liang, Fan Min, Xuan Rong-Xi. Fabrication of SOI material based on smart-cut technology. Acta Physica Sinica, 2007, 56(3): 1668-1673. doi: 10.7498/aps.56.1668
    [16] Qiao Ming, Zhang Bo, Li Zhao-Ji, Fang Jian, Zhou Xian-Da. Analysis of the back-gate effect on the breakdown behavior of lateral high-voltage SOI transistors. Acta Physica Sinica, 2007, 56(7): 3990-3995. doi: 10.7498/aps.56.3990
    [17] Hu Hui-Yong, Zhang He-Ming, Lü Yi, Dai Xian-Ying, Hou Hui, Ou Jian-Feng, Wang Wei, Wang Xi-Yuan. SiGe HBT large signal equivalent circuit model. Acta Physica Sinica, 2006, 55(1): 403-408. doi: 10.7498/aps.55.403
    [18] Zheng Zhong-Shan, Liu Zhong-Li, Zhang Guo-Qiang, Li Ning, Fan Kai, Zhang En-Xia, Yi Wan-Bing, Chen Meng, Wang Xi. Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET. Acta Physica Sinica, 2005, 54(1): 348-353. doi: 10.7498/aps.54.348
    [19] Lü Yi, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Shu Bin. Junction capacitance models of SiGe HBT. Acta Physica Sinica, 2004, 53(9): 3239-3244. doi: 10.7498/aps.53.3239
    [20] ZHU WEI-WEN, ZHU WEN-YU, WANG WEI-YUAN. STUDY OF Si SOI OPTICAL PROPERTIES BY USING ELLIPSOMETRIC FOUR-PHASE MODEL. Acta Physica Sinica, 1986, 35(6): 797-802. doi: 10.7498/aps.35.797
Metrics
  • Abstract views:  7458
  • PDF Downloads:  717
  • Cited By: 0
Publishing process
  • Received Date:  21 June 2010
  • Accepted Date:  13 October 2010
  • Published Online:  15 July 2011

/

返回文章
返回