LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY
Acta Physica Sinica
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Acta Phys. Sin.  1988, Vol. 37 Issue (10): 1607-1612    
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LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY
ZHOU GUO-LIANG1, CHEN KE-MING1, TIAN LIANG-GUANG2
(1)复旦大学表面物理实验室; (2)上海交通大学应用物理系
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