Study on Grove model of the 4H-SiC homoepitaxial growth
Acta Physica Sinica
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Acta Phys. Sin  2014, Vol. 63 Issue (3): 037102     doi:10.7498/aps.63.037102
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
Study on Grove model of the 4H-SiC homoepitaxial growth
Jia Ren-Xu1, Liu Si-Cheng1, Xu Han-Di1, Chen Zheng-Tao1, Tang Xiao-Yan1, Yang Fei2, Niu Ying-Xi2
1. School of Microelectronics, Xidian University, Xi’an 710071, China;
2. State grid smart grid research institute, Beijing 100192, China
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