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物理学报. 1980, 29(1): 1-10.
doi: 10.7498/aps.29.1.
升华外延碳化硅p-n结的性质
- 收稿日期: 1978-09-19
- 刊出日期: 2005-07-29
摘要: 本工作测量了升华外延碳化硅p-n结的电流-电压特性和空间电荷电容。通过对正向电流-电压特性及电容-电压特性的分析,表明:随着外延生长条件的不同,这种p-n结的结构可以在相当宽的范围内变化,从近于线性梯度结直到典型的p-i-n结,而大多数p-n结则介于这两者之间。文中就外延生长条件对p-n结结构的影响进行了简略的讨论。此外,还给出了升华外延碳化硅p-n结正向电发光的亮度-电流关系、光谱分布以及脉冲和交流激励的测量结果。
English Abstract
THE CHARACTERISTICS OF EPITAXIAL p-n JUNCTIONS GROWN BY METHOD OF SILICON CARBIDE CRYSTALS SUBLIMATION
- Received Date:
19 September 1978
- Published Online:
29 July 2005
Abstract: Measurements of the voltage-current characteristics and space-charge capacitance have been made on the epitaxial p-n junctions grown by method of silicon carbidt crystals sublimation. An analysis of the forward voltage-current and voltage-capacitance charateristics shows that the structures of the p-n junction may vary over a quite wide range, from typical p-i-n junctions to nearly linear graded junctions resulted from different epitaxial growth parameters, but most of them have intermidiate structures. The effect of epitaxial growth parameters on structures of p-n junctions is briefly discussed.In addition, The brightness-current characteristics, the spectral distribution of electroluminescence of forward biased epitaxial p-n junctions, and their performance under pulse and a.c. excitions are also described.
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