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摘要: 用腐蚀法研究了β-SiC外延层中的晶体缺陷。腐蚀剂为熔融氢氧化钾。三角形尖底蚀坑对应于位错。在β-SiC中的全位错为立方晶系的73°位错和60°位错。不同堆垛方式的β-siC生长层相遇时将形成{111}交界层错,其腐蚀图象为平行于方向的直线。60°位错可分解为两个1/6SchockLey不全位错,并夹着一片{111}层错构成扩展位错。三个1/6压杆位错与三片{111}层错可构成层错锥体。正、反堆垛的β-SiC可形成尖晶石律双晶,双晶面为(111)。腐蚀法和X射线劳厄法证实了这种双晶的存在。
Abstract: The defects in β-SiC epitaxial film are studied by means of etching method. The etchant used is the fused alkali hydroxide. The triangular etch pits with sharp bottom correspond to the dislocations. The perfect dislocations in β-SiC crystal are 73° dislocations and 60° dislocations. In β-SiC crystal there exists {111} boundary stacking fault formed by the contact of two β-SiC growing layer having different stacking sequences. The etching figure of the stacking fault is straight line running parallel to the 〈110〉 direction. The 60° dislocations can dissociate into two 1/6〈112〉 Schockley dislocat'ions and these two partial dislocations with a {111} stacking fault form an extensive dislocation. Three 1/6(110} stair-rod dislocations and three {111} stacking faults construct a stacking fault pyramid. Two parts of β-SiC film having positive and negative stacking sequence can produce a twin with the twin plane (111). The results of etching method and X-ray Laue method confirme the existence of the twin of this type.