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拓扑绝缘体的普适电导涨落

李兆国 ,  张帅 ,  宋凤麒

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拓扑绝缘体的普适电导涨落

李兆国, 张帅, 宋凤麒
物理学报. 2015, 64(9): 097202.
doi: 10.7498/aps.64.097202.
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  • 摘要

    拓扑绝缘体因其无能量耗散的拓扑表面输运而备受关注, 揭示拓扑表面态因其 的贝利相位而产生的拓扑输运现象, 将有助于拓扑绝缘体相关器件的应用开发. 本文回顾了普适电导涨落(UCF) 揭示拓扑绝缘体奇异输运性质的研究进展. 通过调控温度、角度、门电压、垂直磁场和平行磁场等外部参量, 实现了对拓扑绝缘体的UCF 效应的系统研究, 证实了拓扑绝缘体中二维UCF 的输运现象, 并通过尺寸标度规律获得了UCF 的拓扑起源的实验证据, 讨论了拓扑表面态的UCF 的统计对称规律. 从而实现了对拓扑绝缘体UCF 效应的较为完整的理解.

    作者及机构信息

    • 1.

      南京大学物理学院, 固体微结构物理国家重点实验室, 人工微结构科学与技术协同创新中心, 南京 210093

    • 基金项目: 国家重点基础研究发展计划(批准号: 2013CB922103, 2011CB922103, 2014CB921103)、国家自然科学基金(批准号: 91421109, 11023002, 11134005, 61176088) 和江苏省自然科学基金(批准号: BK20130054) 资助的课题.

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  • [1]

    Hasan M Z, Kane C L 2010 Rev. Mod. Phys. 82 3045
    [2]

    Qi X L, Zhang S C 2011 Rev. Mod. Phys. 83 1057
    [3]

    Ando Y 2013 J. Phys. Soc. Jpn. 82 102001
    [4]

    Zhang H, Liu C X, Qi X L, Dai X, Fang Z, Zhang S C 2009 Nat. Phys. 5 438
    [5]

    Chen Y L, Analytis J G, Chu J H, Liu Z K, Mo S K, Qi X L, Zhang H J, Lu D H, Dai X, Fang Z, Zhang S C, Fisher I R, Hussain Z, Shen Z X 2009 Science 325 178
    [6]

    Ren Z, Taskin A A, Sasaki S, Segawa K, Ando Y 2010 Phys. Rev. B 82 241306
    [7]

    Ren Z, Taskin A A, Sasaki S, Segawa K, Ando Y 2011 Phys. Rev. B 84 165311
    [8]

    Bardarson J H, Moore J E 2013 Rep. Prog. Phys. 76 056501
    [9]

    Qu D X, Hor Y S, Xiong J, Cava R J, Ong N P 2010 Science 329 821
    [10]

    Chen T, Chen Q, Schouteden K, Huang W, Wang X, Li Z, Miao F, Wang X, Li Z, Zhao B, Li S, Song F, Wang J, Wang B, Haesendonck C V, Wang G 2014 Nat. Commun. 5 5022
    [11]

    Xu Y, Miotkowski I, Liu C, Tian J, Nam H, Alidoust N, Hu J, Shih C K, Hasan M Z, Chen Y P 2014 Nat. Phys. 10 956
    [12]

    Peng H, Lai K, Kong D, Meister S, Chen Y, Qi X L, Zhang S C, Shen Z X, Cui Y 2010 Nat. Mater. 9 225
    [13]

    Li Z G, Qin Y Y, Song F Q, Wang Q H, Wang X F, Wang B G, Ding H F, Haesondonck C V, Wan J G, Zhang Y H, Wang G H 2012 Appl. Phys. Lett. 100 083107
    [14]

    Chen J, Qin H J, Yang F, Liu J, Guan T, Qu F M, Zhang G H, Shi J R, Xie X C, Yang C L, Wu K H, Li Y Q, Lu L 2010 Phys. Rev. Lett. 105 176602
    [15]

    Li Z G, Garate I, Pan J, Wan X G, Chen T S, Ning W, Zhang X O, Song F Q, Meng Y Z, Hong X C, Wang X F, Pi L, Wang X R, Wang B G, Li S Y, Reed M A, Glazman L, Wang G H 2015 Phys. Rev. B 91 041401
    [16]

    Akkermans E, Montambaux G 2007 Mesoscopic Physics of Electrons and Photons (New York: Cambridge University Press)
    [17]

    Li Z G 2014 Ph. D. Dissertation (Nanjing: Nanjing University) (in Chinese) [李兆国2014 博士论文(南京: 南京 大学)]
    [18]

    Umbach C P, Washburn S, Laibowitz R B, Webb R A 1984 Phys. Rev. B 30 4048
    [19]

    Lee P A, Stone A D 1985 Phys. Rev. Lett. 55 1622
    [20]

    Webb R A, Washburn S, Umbach C P, Laibowitz R B 1985 Phys. Rev. Lett. 54 2696
    [21]

    Lee P A, Stone A D, Fukuyama H 1987 Phys. Rev. B 35 1039
    [22]

    Yang P Y, Wang L Y, Hsu Y W, Lin J J 2012 Phys. Rev. B 85 085423
    [23]

    Beenakker C W J, Houten H V 1988 Phys. Rev. B 37 6544
    [24]

    Licini J C, Bishop D J, Kastner M A, Melngailis J 1985 Phys. Rev. Lett. 55 2987
    [25]

    Webb R A, Washburn S, Umbach C P 1988 Phys. Rev. B 37 8455
    [26]

    Lien A S, Wang L Y, Chu C S, Lin J J 2011 Phys. Rev. B 84 155432
    [27]

    Altshuler B L 1985 JETP Lett. 41 648
    [28]

    Altshuler B L, Shklovskii B I 1986 Sov. Phys. JETP 64 127
    [29]

    Checkelsky J G, Hor Y S, Liu M H, Qu D X, Cava R J, Ong N P 2009 Phys. Rev. Lett. 103 246601
    [30]

    Matsuo S, Koyama T, Shimamura K, Arakawa T, Nishihara Y, Chiba D, Kobayashi K, Ono T, Chang C Z, He K, Ma X C, Xue Q K 2012 Phys. Rev. B 85 075440
    [31]

    Li Z G, Qin Y Y, Y. Mu W, Chen T S, Xu C H, He L B, Wan J G, Song F Q, Zhou J F, Han M, Wang G H 2011 J. Nanosci. Nanotechnol. 11 7042
    [32]

    Li Z G, Chen T S, Pan H Y, Song F Q, Wang B G, Han J H, Qin Y Y, Wang X F, Zhang R, Wan J G, Xing D Y, Wang G H 2012 Sci. Rep. 2 595
    [33]

    Kandala A, Richardella A, Zhang D, Flanagan T C, Samarth N 2013 Nano Lett. 13 2471
    [34]

    Lee J, Park J, Lee J H, Kim J S, Lee H J 2012 Phys. Rev. B 86 245321
    [35]

    Gehring P, Benia H M, Weng Y, Dinnebier R, Ast C R, Burghard M, Kern K 2013 Nano Lett. 13 1179
    [36]

    Tang C S, Xia B, Zou X, Chen S, Ou H W, Wang L, Rusydi A, Zhu J X, Chia E E M 2013 Sci. Rep. 3 3513
    [37]

    Xiong J, Khoo Y, Jia S, Cava R J, Ong N P 2013 Phys. Rev. B 88 035128
    [38]

    Baxter D V, Richter R, Trudeau M L, Cochrane R W, Strom-Olsen J O 1989 J. Phys. France 50 1673
    [39]

    Li Z G, Meng Y Z, Pan J, Chen T S, Hong X C, Li S Y, Wang X F, Song F Q, Wang B G 2014 Appl. Phys. Express 7 065202
    [40]

    Bianchi M, Guan D, Bao S, Mi J, Iversen B B, King P D C, Hofmann P 2010 Nat. Commun. 1 128
    [41]

    Bahramy M S, King P D C, de la Torre A, Chang J, Shi M, Patthey L, Balakrishnan G, Hofmann P, Arita R, Nagaosa N, Baumberger F 2012 Nat. Commun. 3 1159
    [42]

    King P D C, Hatch R C, Bianchi M, Ovsyannikov R, Lupulescu C, Landolt G, Slomski B, Dil J H, Guan D, Mi J L, Rienks E D L, Fink J, Lindblad A, Svensson S, Bao S, Balakrishnan G, Iversen B B, Osterwalder J, Eberhardt W, Baumberger F, Hofmann P 2011 Phys. Rev. Lett. 107 096802
    [43]

    Benia H M, Lin C, Kern K, Ast C R 2011 Phys. Rev. Lett. 107 177602
    [44]

    Tian M, Ning W, Qu Z, Du H, Wang J, Zhang Y 2013 Sci. Rep. 3 1212
    [45]

    Cao H, Liu C, Tian J, Xu Y, Miotkowski I, Hasan M Z, Chen Y P 2014 arXiv 1409 3217
    [46]

    Adroguer P, Carpentier D, Cayssol J, Orignac E 2012 New J. Phys. 14 103027
    [47]

    Zhang L, Zhuang J, Xing Y, Li J, Wang J, Guo H 2014 Phys. Rev. B 89 245107
    [48]

    Pal A N, Kochat V, Ghosh A 2012 Phys. Rev. Lett. 109 196601
    [49]

    Rossi E, Bardarson J H, Fuhrer M S, Sarma S D 2012 Phys. Rev. Lett. 109 096801
    [50]

    Imry Y 1986 Europhys. Lett. 1 249
    [51]

    Buttiker M, Imry Y, Landauer R, Pinhas S 1985 Phys. Rev. B 31 6207
    [52]

    Muttalib K A, Pichard J L, Stone A D 1987 Phys. Rev. Lett. 59 2475
    [53]

    Mello P A, Akkermans E, Shapiro B 1988 Phys. Rev. Lett. 61 459
    [54]

    Zanon N, Pichard J L 1988 J. Phys. France 49 907
    [55]

    Stone A D 1989 Phys. Rev. B 39 10736
    [56]

    Mello P A 1988 Phys. Rev. Lett. 60 1089
    [57]

    Meir Y, Entin-Wohlman O 1993 Phys. Rev. Lett. 70 1988
    [58]

    Beenakker C W J 1993 Phys. Rev. Lett. 70 1155
    [59]

    Lyanda-Geller Y B, Mirlin A D 1994 Phys. Rev. Lett. 72 1894
    [60]

    Dyson F J 1962 J. Math. Phys. 3 140
    [61]

    Debray P, Pichard J L, Vicente J, Tung P N 1989 Phys. Rev. Lett. 63 2264
    [62]

    Mailly D, Sanquer M, Pichard J L, Pari P 1989 Europhys. Lett. 8 471
    [63]

    Moon J S, Birge N O, Golding B 1996 Phys. Rev. B 53 R4193
    [64]

    Moon J S, Birge N O, Golding B 1997 Phys. Rev. B 56 15124
    [65]

    Hoadley D, McConville P, Birge N O 1999 Phys. Rev. B 60 5617
    [66]

    Millo O, Klepper S J, Keller M W, Prober D E, Xiong S, Stone A D, Sacks R N 1990 Phys. Rev. Lett. 65 1494
    [67]

    Koga T, Nitta J, Akazaki T, Takayanagi H 2002 Phys. Rev. Lett. 89 046801
    [68]

    Bohra G, Somphonsane R, Aoki N, Ochiai Y, Akis R, Ferry D K, Bird J P 2012 Phys. Rev. B 86 161405
    [69]

    Rahman A, Guikema J W, Markovic N 2014 Phys. Rev. B 89 235407
    [70]

    Garate I, Glazman L 2012 Phys. Rev. B 86 035422
    [71]

    Fatemi V, Hunt B, Steinberg H, Eltinge S L, Mahmood F, Butch N P, Watanabe K, Taniguchi T, Gedik N, Ashoori R C, Jarillo-Herrero P 2014 Phys. Rev. Lett. 113 206801
    [72]

    Takagaki Y 2012 Phys. Rev. B 85 155308
    [73]

    Cheianov V, Glazman L I 2013 Phys. Rev. Lett. 110 206803
    [74]

    Xia B, Ren P, Sulaev A, Liu P, Shen S Q, Wang L 2013 Phys. Rev. B 87 085442
    [75]

    Alegria L D, Schroer M D, Chatterjee A, Poirier G R, Pretko M, Patel S K, Petta J R 2012 Nano Lett. 12 4711
    [76]

    Checkelsky J G, Hor Y S, Cava R J, Ong N P 2011 Phys. Rev. Lett. 106 196801
    [77]

    Matsuo S, Chida K, Chiba D, Ono T, Slevin K, Kobayashi K, Ohtsuki T, Chang C Z, He K, Ma X C, Xue Q K 2013 Phys. Rev. B 88 155438
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  • 文章访问数:  3151
  • PDF下载量:  603
  • 被引次数: 0
出版历程
  • 收稿日期:  2015-03-16
  • 修回日期:  2015-04-28
  • 刊出日期:  2015-05-05
物理学报. 2015, 64(9): 097202.
doi: 10.7498/aps.64.097202.

拓扑绝缘体的普适电导涨落

  • 1. 南京大学物理学院, 固体微结构物理国家重点实验室, 人工微结构科学与技术协同创新中心, 南京 210093
    基金项目: 

    国家重点基础研究发展计划(批准号: 2013CB922103, 2011CB922103, 2014CB921103)、国家自然科学基金(批准号: 91421109, 11023002, 11134005, 61176088) 和江苏省自然科学基金(批准号: BK20130054) 资助的课题.

  • 收稿日期:  2015-03-16
  • 修回日期:  2015-04-28
  • 刊出日期:  2015-05-05

摘要: 拓扑绝缘体因其无能量耗散的拓扑表面输运而备受关注, 揭示拓扑表面态因其 的贝利相位而产生的拓扑输运现象, 将有助于拓扑绝缘体相关器件的应用开发. 本文回顾了普适电导涨落(UCF) 揭示拓扑绝缘体奇异输运性质的研究进展. 通过调控温度、角度、门电压、垂直磁场和平行磁场等外部参量, 实现了对拓扑绝缘体的UCF 效应的系统研究, 证实了拓扑绝缘体中二维UCF 的输运现象, 并通过尺寸标度规律获得了UCF 的拓扑起源的实验证据, 讨论了拓扑表面态的UCF 的统计对称规律. 从而实现了对拓扑绝缘体UCF 效应的较为完整的理解.

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