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光学偶极阱俘获的中性原子阵列是多体物理、量子计算、量子模拟等领域的重要实验平台. 本文详细介绍了制备一维、包含40个铯原子的均匀单原子阵列的实验过程, 包括偶极阱阵列的产生装置、原子阵列荧光成像以及偶极阱阵列均匀性优化. 偶极阱阵列的非均匀性主要是由声光偏转器(AOD)的非线性衍射效率和多频率射频信号在功率放大过程中的互调效应引起. 通过测量偶极阱光强和受俘获原子光频移的起伏反馈优化施加于AOD多频率射频信号的相位和振幅, 将偶极阱阵列的强度均匀性优化为2%. 另外, 实验上分别测量了偶极阱阵列内原子的振荡频率、装载率和寿命的均匀性. 结果显示, 振荡频率均匀性为2%; 单原子平均装载率为58%, 阱中原子的光谱一致性为3%; 单原子暗阱平均寿命约为6(1)s, 不同原子寿命的起伏为8%.Neutral atom array serves as a crucial experimental platform for studying many-body physics, quantum computing, and quantum simulation. In this work, we describe in detail the experimental process of preparing a one-dimensional homogeneous single atom array containing 40 Cs atoms, including the dipole trap array generation device, atomic array fluorescence imaging, and the uniformity optimization of the dipole trap array. The beam waist of the dipole trap is about 1.8 μm, and the spatial resolution of the imaging system is higher than 1.55 μm. The non-uniformity of dipole trap array is mainly caused by the intermodulation effect of multi-tone signal during amplification. The uniformity of the dipole trap array is optimized to 2% (Fig. (a)) by measuring the fluctuations of the dipole trap intensity and the light shift of trapped atom, and providing feedback to adjust the phase and amplitude applied to the multi-tone RF signal on acousto-optic deflectors. Furthermore, the uniformity of oscillation frequency, loading rate, and lifetime for trapped atom in the dipole trap array are measured. These results show that oscillation frequency has a uniformity within 2% (Fig. (b)); mean loading rate is around 58% with a uniformity within 3%; and mean lifetime of single atom in dark trap is around 6(1) s with a uniformity within 8%.
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Keywords:
- quantum computing /
- atom array /
- acousto-optic deflectors /
- intermodulation
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图 1 偶极阱阵列以及成像光路示意图, 插图为AOD工作原理示意图
Fig. 1. Schematic diagram of the dipole trap array and imaging optics, and the inset demonstrates the operational principle of an AOD.
图 2 偶极阱阵列CCD成像图及强度分布
Fig. 2. CCD imaging and intensity distribution of the dipole trap array.
图 3 (a), (b)成像系统校准与分辨率测量, 通过成像系统分别对780 nm单模保偏光纤端面成像(a)及测试靶成像(b);(c)图(b)中第8组刻线的第3个条纹放大图;(d)图(a)灰度值强度分布;(e), (f)分别对应于水平刻线和竖直刻线强度分布图
Fig. 3. Calibration and resolution measurement of the imaging system: (a), (b) Single-mode polarization-maintaining fiber end-face is imaged by the imaging system, and a test target is imaged as well; (c) zooms in on the third stripe of the eighth group of patterns in Fig. (b); (d) the intensity distribution of the grayscale values in Fig. (a); (e), (f) correspond to intensity distribution maps of horizontal and vertical stripes, respectively.
图 4 实验过程与单原子阵列荧光成像 (a)实验时序图;(b)单原子信号统计直方图(图(c)中从左往右第13个偶极阱), 曝光时间为30 ms, 测量次数为3600, 浅蓝色线为双峰高斯函数拟合曲线;(c)单原子阵列荧光信号叠加图, 叠加次数为500
Fig. 4. Experimental process and fluorescence imaging of a single-atom array: (a) Experimental timing sequence; (b) histogram of single-atom signals (the 13 th dipole trap from left to right in Fig. (c)), with an exposure time of 30 ms and a total measurement times of 3600, the light blue line represents the fitted curve using a bimodal Gaussian function; (c) fluorescence signal superimposed image of single-atom array, with a total of 500 superimpositions.
图 5 单原子阵列光频移和振荡频率均匀性 (a)不同偶极阱引起原子光频移分布图, 插图实验结果可用于确定偶极阱 13 中原子的光频移;(b)不同偶极阱内原子振荡频率分布图, 插图为偶极阱 13 通过释放再俘获方法测量得到的实验结果, 用于确定原子的振荡频率. 图中的误差棒为拟合误差
Fig. 5. Uniformity of light shift and oscillation frequency in single-atom array: (a) Distribution of light shift caused by different dipole trap, with inset showing the experimental results that can be used to determine the light frequency shift of atoms in dipole trap 13; (b) distribution of oscillation frequencies within different dipole traps, with inset indicating the experimental results obtained through the release-recapture method for measuring dipole trap 13, which can be used to determine the oscillation frequency of atoms. The error bars in panels (a) and (b) represent fitting errors.
图 6 单原子阵列装载率和寿命均匀性 (a)不同偶极阱单原子装载概率分布图, 误差棒为多次测量结果的标准差; (b)不同偶极阱内单原子暗阱寿命分布图, 误差棒为拟合误差, 插图为偶极阱13暗阱寿命测量结果
Fig. 6. Uniformity of loading probability and lifetime in the single-atom array: (a) Distribution of loading probability in different dipole trap, the error bar is the standard deviation of multiple measurement results; (b) distribution of lifetime in different dipole trap, the error bars represent fitting errors, the inset presents the measurement results of the dark trap lifetime in dipole trap 13.
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