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Ca位置换Fe的氧化物Ca1-xFexMnO3(x=00.12)的制备及电输运性能

张飞鹏 张忻 路清梅 刘燕琴 张久兴

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Ca位置换Fe的氧化物Ca1-xFexMnO3(x=00.12)的制备及电输运性能

张飞鹏, 张忻, 路清梅, 刘燕琴, 张久兴

Preparation and electrical transport properties of Fe doped Ca1-xFexMnO3(x=00.12) oxide

Zhang Fei-Peng, Zhang Xin, Lu Qing-Mei, Liu Yan-Qin, Zhang Jiu-Xing
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  • 采用柠檬酸溶胶凝胶结合陶瓷烧结工艺制备了Ca位置换Fe的Ca1-xFexMnO3(x=00.12)氧化物粉末及块体试样,通过X射线衍射及电参数测试分析了所得试样.实验结果表明:在实验范围内,所有试样呈单一物相,Ca位置换Fe之后随置换量的增加,CaMnO3的晶胞逐渐变小,晶粒长大受到抑制.测试温度范围内所有试样均呈半导体输运特性,电输运机制未发生变化;当x在0
    The Fe doped Ca1-xFexMnO3(x=00.12) powder and bulk samples are fabricated by citric acid sol-gel and ceramic preparation process, the samples are analzed by X-ray diffraction pattern and electrical constant measurement. The results show that all samples are of single phase, the lattice constants are gradually lowered by Fe doping for Ca site, and the crystalline grain growth is restrained. All the bulk samples have semiconductor transporting characteristics in the whole temperature range of measurement. The transportation mechanism is not changed. The energy for polarons to hop is increased for doped samples and thus the electrical resistivity is increased by increasing Fe doping concentration.
    • 基金项目: 国家自然科学基金(批准号:50702003,50801002)资助的课题.
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  • [1]

    Jin S, Tiefel T H, McCormack M, Fastnacht R A, Ramesh R, Chen L H 1994 Science 264 413

    [2]

    Schiffer P, Ramirez A P, Bao W, Cheong S W 1995 Phys. Rev. Lett. 75 3336

    [3]
    [4]
    [5]

    Urushibara A, Moritomo Y, Arima T, Asaamitsu A, Kido G, Tokura Y 1995 Phys. Rev. B 51 14103

    [6]
    [7]

    Maignan A, Martin C, Damay F, Raveau B 1998 Chem. Mater. 10 950

    [8]

    Zhou Q, Kennedy B J 2006 J. Phys. Chem. Solids 67 1595

    [9]
    [10]
    [11]

    Wollan E O, Koehler W C 1955 Phys. Rev. 100 545

    [12]

    Yang Z Q, Sun Q, Ye L, Xie X D 1998 Chin. Phys. B 7 851

    [13]
    [14]

    Xiang P, Kinemuchi Y, Kaga H, Watari K 2008 J. Alloys Compd. 454 364

    [15]
    [16]
    [17]

    Sousa D, Nunes M R, Silveira C, Matos I, Lopes A B, Jorge M E M 2008 Mater. Chem. Phys. 109 311

    [18]

    Fan X J, Koinuma H, Hasegawa T 2003 Physica B 329333 723

    [19]
    [20]
    [21]

    Ohtaki M, Koga H, Tokunaga T, Eguchi K, Arai H 1995 J. Solid State Chem. 120 105

    [22]
    [23]

    Zhou Y, Matsubara I, Funahashi R, Xu G, Shikano M 2003 Mater. Res. Bull. 38 341

    [24]

    Kumar N, Kishan H, Rao A, Awana V P S 2010 J. Alloys Compd. 502 283

    [25]
    [26]

    Wang Y, Sui Y, Ren P, Wang L, Wang X, Su W, Fan H 2010 Inorg. Chem. 49 3216

    [27]
    [28]

    Park J W, Kwak D H, Yoon S H, Choi S C 2009 J. Alloys Compd. 487 550

    [29]
    [30]
    [31]

    Ang R, Sun Y P, Ma Y Q, Zhao B C, Zhu X B, Song W H 2006 J. Appl. Phys. 100 063902

    [32]
    [33]

    Miclau M, Hbert S, Retoux R, Martin C 2005 J. Solid State Chem. 178 1104

    [34]

    Matsukawa M, Tamura A, Yamato Y, Kumagai T, Nimori S, Suryanarayanan R 2007 J. Magn. Magn. Mater. 310 e283

    [35]
    [36]
    [37]

    Zhang F P, Lu Q M, Zhang X, Zhang J X 2011 J. Alloys Compd. 509 542

    [38]
    [39]

    Gil de Muro I, Insausti M, Lezama L, Rojo T 2005 J. Solid State Chem. 178 928

    [40]
    [41]

    Lu Q M, Zhang B X, Zhang F P, Zhang X, Zhang J X 2010 J. Chin. Rare Earth Soc. 28 471 (in Chinese) [路清梅、张冰心、张飞鹏、张 忻、张久兴 2010 中国稀土学报 28 471]

    [42]

    Patterson A L 1939 Phys. Rev. 56 978

    [43]
    [44]
    [45]

    Cong B T, Tsuji T, Thao P X, Thanh P Q, Yamamura Y 2004 Physca B 352 18

    [46]
    [47]

    Zhang F P, Zhang X, Lu Q M, Zhang J X 2010 Acta Phys. Sin. 59 4211 (in Chinese) [张飞鹏、张 忻、路清梅、张久兴 2010 物理学报 59 4211]

    [48]
    [49]

    Mott N F, Davis E A 1971 Electronic Processes in Non-crystalline Materials (Oxford: Clarendon Press) p41

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出版历程
  • 收稿日期:  2010-10-26
  • 修回日期:  2011-01-20
  • 刊出日期:  2011-04-05

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