基于密度泛函理论研究掺杂Pd石墨烯吸附O2及CO

孙建平; 缪应蒙; 曹相春

doi:10.7498/aps.62.036301

摘要

基于第一性原理的密度泛函理论研究了单个O2和CO气体分子吸附于本征石墨烯和掺杂钯(Pd)的石墨烯的体系, 通过石墨烯掺Pd前后气体分子的吸附能、电荷转移及能带和态密度的计算, 发现掺Pd后气体分子吸附能和电荷转移显著增大, 这是由于Pd的掺杂, 在本征石墨烯能带中引入了杂质能级, 增强了石墨烯和吸附气体分子间的相互作用; 氧化性气体O2和还原性气体CO吸附对石墨烯体系能带结构和态密度的影响明显不同, 本征石墨烯吸附O2后, 费米能级附近态密度变大, 掺Pd后在一定程度变小; 吸附还原性的CO后, 石墨烯费米能级附近态密度几乎没有改变, 表明掺杂Pd不会影响石墨烯对CO的气体灵敏度, 但由于CO对石墨烯的吸附能增大, 可以提高石墨烯对还原性气体的气敏响应速度.

关键词:

石墨烯 /
Pd掺杂 /
吸附 /
密度泛函

Abstract

Based on density functional theory, the single O2 and CO adsorption on pristine and palladium (Pd) doped graphene are studied using first-principles calculations. By calculating the system adsorption energy, charge transfer, band structure and density of states (DOS), we find that compared with O2 and CO adsorbed on the pristine graphene, the Pd doped systems have high adsorption energies and large charge transfers. The reason is that the new energy levels which are brought into pristine graphene by the dopant Pd strengthened the interaction between graphene and the adsorbed gas molecule. Oxidizing gas O2 and reducing gas CO have obviously different effects on band structure and DOS of graphene. The DOS near the Fermi level of graphene has great change after adsorbing O2 and the change becomes smaller when O2 is adsorbed on Pd doped graphene, while there is almost no change in DOS when graphene adsorbs CO, which indicates that doping Pd on graphene adsorbing CO will not enhance the gas sensitivity. However, the adsorption energy increases, which can improve the gas sensing response speed when graphene adsorbs reducing gas.

Keywords:

作者及机构信息

1.
华北电力大学电气与电子工程学院, 北京 102206

基金项目: 中央高校基本科研业务费专项资金(批准号: 12MS26)资助的课题.

Authors and contacts

1.
Electrical and Electronic Engineering Institute, North China Electric Power University, Beijing 102206, Chian

Funds: Project supported by the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. 12MS26).

参考文献

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施引文献

[1]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[2]	Geim A K, Novoselov K S 2007 Nat. Mater. 6 183
[3]	Castro Neto A H, Guinea F, Peres N M R, Novoselov K S, Geim A K 2009 Rev. Mod. Phys. 81 109
[4]	Chen J H, Masa I, Jang C, Hines D R, Fuhrer M S, Williams E D 2007 Adv. Mater. 19 3623
[5]	Stoller M D, Park S, Zhu Y, An J, Ruoff R S 2008 Nano Lett. 8 3498
[6]	Schedin F, Geim A K, Morozov S V 2007 Nat. Mater. 6 652
[7]	Kong J, Franklin N R, Zhou C, Chapline M G, Peng S, Cho K, Dai H 2000 Science 287 622
[8]	Wehling T O, Novoselov K S, Morozov S V, Vdovin E E, Katsnelson M I, Geim A K, Lichtenstein A I 2008 Nano Lett. 8 173
[9]	Leenaerts O, Partoens B, Peeters F M 2008 Phys. Rev. B 77 125416
[10]	Huang B, Li Z Y, Liu Z R, Zhou G, Hao S G, Wu J, Gu B L, Duan W H 2008 Phys. Chem. C 112 13442
[11]	Zhang F W, Sun Y Y, Chen L 2010 Solid State Commun. 150 1906
[12]	Dai J Y, Yuan J M, Giannozzi P 2009 Appl. Phys. Lett. 95 232105
[13]	Hu X H, Xu J M, Sun L T 2012 Acta Phys. Sin. 61 047106 (in Chinese) [胡小会, 许俊敏, 孙立涛 2012 物理学报 61 047106 ]
[14]	Chung M G, Kim D H, Lee H M 2012 Sens. Actuators B 166-167 172
[15]	Zhou M, Lu Y H 2011 Nanotechnology 22 385502
[16]	Avouris P, Chen Z, Perebeinos V 2007 Nature Nanotech. 2 605
[17]	Henkelman R, Arnaldsson A, Jonsson H 2006 Comput. Mater. Sci. 36 354
[18]	Ma F, Zhang Z X, Jia H S, Liu X G, Hao Y Y, Xu B S 2010 J. Mol. Struct. 955 134
[19]	Hu H X, Zhang Z H, Liu X H, Qiu M, Ding K H 2009 Acta Phys. Sin. 58 10 (in Chinese) [胡海鑫, 张振华, 刘新海, 邱明, 丁开和 2009 物理学报 58 10]
[20]	Chan K T, Neaton J B, Cohen M L 2007 Phys. Rev. B 77 23543

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