- 文章访问数: 2403
- PDF下载量: 493
- 被引次数: 0
摘要: 根据Goltzene等人最近关于原生LEC,HB,压缩变形和中子辐照GaAs中电子顺磁共振(EPR)“AsGa”谱低温光淬灭实验结果,结合Baraff和Schlüter最近关于EL2亚稳态的理论计算,本文认为可进一步证实作者之一在1981年提出的EL2(AsGaVAsVGa)缺陷模型,同时还对Wager和Van Vechten最近提出的EL2(AsGaVAsVGa)的亚稳态机理加以评述和修正。
Abstract: We have discussed EL2 metastable mechanism combining with the theoretical calculations for the EL2 metastable "actuator" performed by Baraff and Schluter. On the basis of the experimental data for the Electronic Paramagnetic Resonance (EPR) "AsGa" photoquench-ings performed by Goltzene et al., we suggest that the AsGaVAsVGa atomic model, in which VAs and VGa are situated in the 1st and 2nd neighboring layers around AsGa antisite atom respectively, can be used for interpreting not only the capacitance but also the EPR "AsGa" photoquenching. This model seems more reasonable than AsGaVGaVAs, in which VGa and VAs are situated in the 2nd and 3rd neighboring layers around AsGa antistite atom respectively, as suggested by Wager and Van Vechten. In addition, our discussion has further supported the identification of the EPR "AsGa" defect ia n-irradiated GaAs as an isolated AsGa antisite atom, and has also shown a slight difference between EL2 defect configurations in LEC and HB GaAs crystals, which would be associated with the EL2 family phenomenon.