A vertical gradient freeze apparatus was set up to investigate the crystal growth in high magnetic field. In the presence and absence of a magnetic field, temperature profiles were measured from solid-liquid interface to over Te-doped InSb melt, and InGaSb with low GaSb mole fraction and Te-doped InSb crystals were grown. The results of investigation show the high magnetic field of 8.00T can improve the quality of InGaSb crystal and the homogeneity of axial profile of Te impurity. These results are considered to be the consequence of the improvement of stability and the reduction of convective velocities of the melts in the high magnetic field.