氧分压对Mg掺杂ZnO薄膜结晶质量和光学特性的影响

鲍善永; 董武军; 徐兴; 栾田宝; 李杰; 张庆瑜

doi:10.7498/aps.60.036804

摘要

利用脉冲激光沉积技术,通过改变沉积过程中的氧气压力,在蓝宝石(0001)基片上制备了一系列ZnMgO合金.通过X射线衍射、反射和透射光谱以及室温和变温荧光光谱,对薄膜的结构和光学性能进行了系统地表征,分析了工作气压对ZnMgO合金薄膜的结晶质量及光学特性的影响.研究结果表明:随着沉积环境中氧气压力的增大,ZnMgO薄膜的结晶质量下降,富氧环境下,与蓝宝石晶格平行的ZnO晶粒的出现是导致薄膜结晶质量下降的主要原因;相对于本征ZnO,不同氧气环境下沉积的ZnMgO薄膜的紫外荧光峰均出现了不同程度的蓝移.随着工

关键词:

Abstract

Zn1-xMgxO films have been deposited on Al2O3(0001) substrates at different oxygen pressures by using pulsed laser deposition method. The influence of oxygen pressure on the crystal quality and optical properties of the films is studied with X-ray diffraction (XRD), transmittance spectra, and photoluminescence (PL). It is found that the crystal quality of the films lowers with increasing of oxygen pressure from 10-4Pa to 10 Pa. At the pressure of 10-4 Pa, the epitaxial relationship between the film and sapphire substrate is determined to be ZnMgO (0001)// Al2O3(0001),ZnMgO 1010]//Al2O3 1120]. In the oxygen rich environment, however, another epitaxial relationship, ZnMgO (0001)//Al2O3(0001) and ZnMgO 1010]//Al2O3 1010], is also present in the films, which is suggested to be responsible for the decline of the crystal quality. Compared with pure ZnO films, the UV peak of Zn1-xMgxO alloys shows red-shift from 3.374 to 3.332 eV with increasing oxygen working pressure increasing from 10-4 Pa up to 10 Pa. The difference in red-shifts can be attributed to the decrease of Mg content in the films resulting from the variation of oxygen pressure. A broad UV PL spectrum was observed at 10 K in the films deposited under different pressures and can be decomposed into two recombination processes of excitons, corresponding to the bound and the localized exciton luminescence, respectively. The binding energy of bound excitons in the ZnMgO films is larger than that in pure ZnO and has an increasing trend with increasing oxygen pressure.

Keywords:

作者及机构信息

1.
大连理工大学物理与光电工程学院三束材料改性教育部重点实验室,大连 116024

基金项目: 国家自然科学基金(批准号:10774018)和国家重点基础研究发展计划(批准号:2007CB616902)资助的课题.

Authors and contacts

1.
Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, School of Physics and Opto-electronic Technology, Dalian University of Technology, Dalian 116024, China

参考文献

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[14]	Muller A, Stolzel M, Dietrich C, Benndorf G, Lorenz M, GrundmannM 2010 J. Appl. Phys. 107 013704
[15]	Yoshikawa A, Wang X Q, Iwaki H, Murakami M, Du X L, Ishitani Y2003 Jpn. J. Appl. Phys. 42 L99
[16]	Liu Z W, Gu J F, Fu W J, Sun C W, Li Y, Zhang Q Y2006 Acta Phys. Sin. 55 5479 (in Chinese) [刘志文、谷建峰、付伟佳、孙成伟、李勇、张庆瑜 2006 物理学报 55 5479]
[17]	Sun C W, Liu Z W, Qin F W, Zhang Q Y, Liu K, Wu S F 2006 Acta Phys. Sin. 55 1390(in Chinese) [孙成伟、刘志文、秦福文、张庆瑜、刘琨、吴世法 2006 物理学报 55 1390]
[18]	McCluskey M D, Jokela S J 2009 J. Appl. Phys. 106 071101
[19]	Janoti A, Van de Walle C G 2007 Phys. Rev. B 76 165202
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[21]	Yoo J, Hong Y J, Yi G, Chon B, Joo T 2008 Semicond. Sci. Technol. 23 095015

施引文献

[1]	Ohtomo A, Kawasaki M, Koida T, Koimama H, Masubuchi K, Sakurai Y, Yoshida Y, Yasuda T, Segawa Y 1998 Appl. Phys. Lett. 72 2466
[2]	Sharma A K, Narayan J, Muth J F, Teng C W, Lin C, Kvit A, Kolbas R M, Holland O W 1999 Appl. Phys. Lett. 75 3327
[3]	Sun C W, Liu Z W, Zhang Q Y 2006 Acta Phys. Sin. 55 430 (in Chinese) [孙成伟、刘志文、张庆瑜 2006 物理学报 55 430]
[4]	Gao L, Zhang J M2010 Acta Phys. Sin. 59 1263 (in Chinese) [高立、张建民 2010 物理学报 59 1263]
[5]	Zhang X T, Xiao Z Y, Zhang W L, Gao H, Wang Y X, Liu Y C, Zhang J Y, Xu W 2003 Acta Phys. Sin. 52 740(in Chinese) [张喜田、肖芝燕、张伟力、高红、王玉玺、刘益春、张吉英、许武 2003物理学报 52 740]
[6]	Yuan Y H, H X, Gao H 2006 Acta Phys. Sin. 55 446(in Chinese) [袁艳红、侯洵、高恒 2006物理学报 55 446]
[7]	Liu H X, Zhou S M, Li S Z, Hang Y, Xu J, Gu S L, Zhang R 2006 Acta Phys. Sin. 55 1398 (in Chinese) [刘红霞、周圣明、李抒智、杭寅、徐军、顾书林、张荣 2006 物理学报 55 1398]
[8]	Service R F 1997 Science 276 895
[9]	Tian Z R, Voigt T A, Liu J 2003 Nature Materials 2 821
[10]	Jin X L, Lou S Y, Kong D G, Li Y C, Du Z L2006 Acta Phys. Sin. 55 4809 (in Chinese) [靳锡联、娄世云、孔德国、李蕴才、杜祖亮 2006 物理学报 55 4809]
[11]	Tampo H, Shibata H, Maejima K, Yamada A, Matsubara K, Fons P, Niki S, Tainaka T, Chiba Y, Kanie H 2007 Appl. Phys. Lett. 91 261907
[12]	Schmidt R, Rheinlander B, Schubert M, Spemann D, Butz T, Lenzner J, Kaidashev E M, Lorenz M, Rahm A, Semmelhack H C, Grundmann M 2003 Appl. Phys. Lett. 82 2260
[13]	Ip K, Heo Y W, Norton D P, Pearton S J, LaRoche J R, Ren F 2004 Appl. Phys. Lett. 85 1169
[14]	Muller A, Stolzel M, Dietrich C, Benndorf G, Lorenz M, GrundmannM 2010 J. Appl. Phys. 107 013704
[15]	Yoshikawa A, Wang X Q, Iwaki H, Murakami M, Du X L, Ishitani Y2003 Jpn. J. Appl. Phys. 42 L99
[16]	Liu Z W, Gu J F, Fu W J, Sun C W, Li Y, Zhang Q Y2006 Acta Phys. Sin. 55 5479 (in Chinese) [刘志文、谷建峰、付伟佳、孙成伟、李勇、张庆瑜 2006 物理学报 55 5479]
[17]	Sun C W, Liu Z W, Qin F W, Zhang Q Y, Liu K, Wu S F 2006 Acta Phys. Sin. 55 1390(in Chinese) [孙成伟、刘志文、秦福文、张庆瑜、刘琨、吴世法 2006 物理学报 55 1390]
[18]	McCluskey M D, Jokela S J 2009 J. Appl. Phys. 106 071101
[19]	Janoti A, Van de Walle C G 2007 Phys. Rev. B 76 165202
[20]	Kubota M, Omuma T, Tsukazaki A, Ohtomo A, Kawasaki M, Sota T, Chichibu S F 2007 Appl. Phys. Lett. 90 141903
[21]	Yoo J, Hong Y J, Yi G, Chon B, Joo T 2008 Semicond. Sci. Technol. 23 095015

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