CaCu3Ti4O12-MgTiO3陶瓷的介电性能与I-V非线性特征

曹蕾; 刘鹏; 周剑平; 王亚娟; 苏丽娜; 刘成

doi:10.7498/aps.60.037701

摘要

采用固相反应法制备了一系列CaCu3Ti4O12-xMgTiO3(x = 0, 0.25, 0.5, 1.0)复相陶瓷,研究了MgTiO3掺杂对CaCu3Ti4O12(CCTO)陶瓷相结构、显微组织、介电性能和I-V非线性特征的影响.研究发现:MgTiO3掺杂不仅使CC

关键词:

The CaCu3Ti4O12-xMgTiO3(x= 0, 0.25, 0.5, 1.0) ceramics have been prepared by a solid-state reaction method. The effects of MgTiO3 doping on the phase structure, microstructure and dielectric properties of CaCu3Ti4O12 ceramics have been investigated. The results indicate that MgTiO3 doping not only reduced the dielectric loss of low frequency range and raised the breakdown voltage but also significantly improved the I-V nonlinearity coefficient. The optimized properties of MgTiO3 doped CaCu3Ti4O12 can be well explained by the uniformity of the grains, the reduction of the average grain boundary thinkness and the enhancement of the grain boundary resistance. Among the CaCu3Ti4O12-MgTiO3 specimens in this work, the CaCu3Ti4O12-0.5MgTiO3 specimen has achieved the best comprehensive properties, which include a dielectric constant (εr) of 53958, dielectric loss (tanδ) of 0.06 at 1 kHz, breakdown voltage (Eb) of 295 V/mm and a large nonlinearity coefficient of 66.3.

Keywords:

作者及机构信息

1.
陕西师范大学物理学与信息技术学院,西安 710062

基金项目: 国家自然科学基金(批准号:50872078和50772065)资助的课题.

Authors and contacts

1.
College of Physics and Information Technology, Shaanxi Normal University, Xian 710062, China

参考文献

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[28]	Yan Y Y, Jin L, Feng L X, Cao G H 2006 Sci. Eng. B 130 146

施引文献

[1]	Homes C C, Vogt T, Shapiro S M, Wakimoto S, Ramirez A P 2001 Science 293 673
[2]	Subramanian M A, Li D, Duan N, Reisner B A, Sleight A W 2000 J. Solid State Chem. 151 323
[3]	Ramirez A P, Subramanian M A, Gardel M, Blumberg G, Li D, Vogt T, Shapiro S M 2000 Solid State Commun. 115 217
[4]	Chung S Y, Kim I D, Kang S J L 2004 Nature Mater. 3 774
[5]	Zhao Y L, Jiao Z K, Cao G H 2003 Acta Phys. Sin. 52 1500 (in Chinese) [赵彦立、焦正宽、曹光旱 2003 物理学报 52 1500]
[6]	Zhou X L, Du P Y 2005 Acta Phys. Sin. 54 354 (in Chinese) [周小莉、杜丕一 2005 物理学报 54 354]
[7]	Shao S F, Zheng P, Zhang J L, Niu X K, Wang C L, Zhong W L 2006 Acta Phys. Sin. 55 6661 (in Chinese) [邵守福、郑鹏、张家良、钮效鹍、王春雷、钟维烈 2006 物理学报 55 6661]
[8]	Marques V P B, Ries A, Sim es A Z, Ramírez M A, Varela J A, Longo E 2007 Ceramics International 33 1187
[9]	Singh D P, Mohapatra Y N, Agrawal D C Mater. 2009 Mater. Sci. Eng. B 157 58
[10]	Fang L, Shen M R, Li Z Y 2006 J. Appl. Phys. 100 104101
[11]	Li T, Chen Z P, Chang F G, Hao J H, Zhang J C 2009 J. Alloy Compd. 484 718
[12]	Lin Y H, Cai J N, Li M, Nan C W 2006 Appl. Phys. Lett. 88 172902
[13]	Luo F C, He J L, Hu J, Lin Y H 2009 J. Appl. Phys. 105 076104
[14]	Cai J N, Lin Y H, Cheng B, Nan C W, He J L, Wu Y J, Chen X M 2007 Appl. Phys. Lett. 91 252905
[15]	Xue H, Guan X F, Yu R, Xiong Z X 2009 J. Alloy Compd. 482 L14
[16]	Chung S Y, Lee S I, Choi J H, Chio S Y 2006 Appl. Phys. Lett. 89 191907
[17]	Chung S Y, Choi S Y, Yamamoto T, Ikuhara Y, Kang S J L 2006 Appl. Phys. Lett. 88 091917
[18]	Leret P, Fernandez J F, Frutos J D, Hevia D F 2007 J. Eur. Ceram. Soc. 27 3901
[19]	Clarke D R 1999 J. Am. Ceram. Soc. 82 485
[20]	Ji S D, Fan F K 1997 J. Ceram. 18 52 (in Chinese) [纪士东、范福康 1997 陶瓷学报 18 52]
[21]	Liu P, He Y, Li J, Zhu G Q, Bian X B 2007 Acta Phys. Sin. 56 5489 (in Chinese) [刘鹏、贺颖、李俊、朱刚强、边小兵 2007 物理学报 56 5489]
[22]	Mu C H, Liu P, He Y, Zhang D, Meng L, Bian X B 2008 Acta Phys. Sin. 57 2432 (in Chinese) [慕春红、刘鹏、贺颖、张丹、孟玲、边小兵 2008 物理学报 57 2432]
[23]	Shannon R D 1976 Acta Cryst. A 32 751
[24]	Wang J F, Luo J H 2007 B. Chinese Ceram. Soc. 26 514 (in Chinese) [王加芳、罗驹华 2007 硅酸盐通报 26 514]
[25]	Fang T T, Mei L T 2007 J. Am. Ceram. Soc. 90 638
[26]	Prakash B S, Varma K B R 2007 J. Phys. Chem. Solids 68 490
[27]	New Inorganic Material Teaching and Research Group of Shanghai Science and Technology University 1977 The Electronic Ceramics Processing Basics (Shanghai: Shanghai People Press) p111 (in Chinese) [上海科技大学新型无机材料教研组 1977 电子陶瓷工艺基础 (上海:上海人民出版社) 第111页]
[28]	Yan Y Y, Jin L, Feng L X, Cao G H 2006 Sci. Eng. B 130 146

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