Al2O3-Y2O3-ZrO2三相复合陶瓷的介电谱研究

陈东阁; 唐新桂; 贾振华; 伍君博; 熊惠芳

doi:10.7498/aps.60.127701

摘要

采用传统的固相反应法,在14001500 ℃下烧结,制备得到Al2O3-Y2O3-ZrO2三相复合陶瓷.样品的结构、形貌和电性能分别用X射线衍射(XRD)、扫描电子显微镜(SEM)及介电谱表征.XRD表明此三相复合体系无其他杂相,加入Y2O3及ZrO2后使得Al2O3成瓷温度降低;SEM表明此体系晶粒直径为200500 nm,并且样品随烧结温度的升高而变得更加致密,晶界更加清晰;介电损耗谱中出现峰值弛豫现象,根据Cole-Cole复阻抗谱得出其为非德拜弛豫.

关键词:

Abstract

Al2O3-Y2O3-ZrO2 ternary composite ceramics are synthesized via the traditional solid state reaction method and sintered at 14001500 ℃. The phase structure, the microstructure and the electrical properties of these samples are characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and dielectric spectra. There are not any other impurity phases in this ternary system supported by XRD patterns, and additions of Y2O3 and ZrO2 into Al2O3 make contributions to the lower calcining heat. SEM indicates that the grain sizes of these samples are about 200500 nm. Furthermore, the densities are improved and the grain boundaries are clearer for the samples sintered at higher temperatures. Relaxation peaks are observed in the dielectric loss plots and the relaxation is of non-Debye type according to Cole-Cole complex impedance spectrum.

Keywords:

作者及机构信息

1.
广东工业大学物理与光电工程学院,广州 510006

基金项目: 国家自然科学基金(批准号:10774030)、广东省科技计划(批准号:2010B090400141)和广州市科技计划(批准号:2010Y1-C221)资助的课题.

Authors and contacts

1.
School of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou 510006, China

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施引文献

[1]	Tian M B, Liang T X 1995 Semicond. Inform. 32 7 (in Chinese) [田民波、梁彤翔 1995 半导体情报 32 7]
[2]
[3]	Lee J H, Yoshikawa A, Fukuda T, Waku Y 2001 J. Cryst. Growth 231 115
[4]
[5]	Song K X, Wu S Y, Chen X M 2007 Mater. Lett. 61 3357
[6]
[7]	Calderon-Moreno J M, Yoshimura M 2004 Mater. Sci. Eng. A 375-377 1246
[8]
[9]	Larrea A, Fuente G F, Merino R I, Orera V M 2002 J. Eur. Ceram. Soc. 22 191
[10]	Pea J I, Larsson M, Merino R I, Francisco I, Orera V M, Lorce J L, Pastor J Y, Martn A, Segurado J 2006 J. Eur. Ceram. Soc. 26 3113
[11]
[12]	Oelgardt C, Anderson J, Heinrich J G, Messing G L 2010 J. Eur. Ceram. Soc. 30 649
[13]
[14]	Araki S, Yoshimura M 2006 J. Eur. Ceram. Soc. 26 3295
[15]
[16]
[17]	Jin L L, Zhou G H, Shimai S Z, Zhang J, Wang S W 2010 J. Eur. Ceram. Soc. 30 2139
[18]
[19]	Kume S, Yasuoka M, Omura N, Watari K 2007 Ceram. Int. 33 269
[20]	Wang C, Peng C Q, Wang R C, Yu K, Li C 2007 Chin. J. Nonferr. Met. 17 1229 (in Chinese) [王超、彭超群、王日初、余琨、李超 2007 中国有色金属学报 17 1229]
[21]
[22]	Rossi G, Burke J E 1973 J. Am. Ceram. Soc. 56 654
[23]
[24]
[25]	Sato E, Carry C 1996 J. Am. Ceram. Soc. 79 2156
[26]
[27]	Lou B Z 2008 Shandong Ceram. 31 6 (in Chinese) [娄本浊 2008 山东陶瓷 31 6]
[28]	Hench L L, West J K 1990 Principles of Electronic Ceramics (New York: John Wiley Sons) p189
[29]
[30]
[31]	Josyulu O S, Sobhanadri J 1980 Phys. Stat. Sol. A 59 323
[32]	Iwauchi K 1971 Jpn. J. Appl. Phys. 10 1520
[33]
[34]	Verma A, Thakur O P, Prakash C, Goel T C, Mendiratta R G 2005 Mater. Sci. Eng. B 116 1
[35]
[36]	Ferrarelli M C, Sinclair D C, West A R, Dabkowska H A, Luke G M 2009 J. Mater. Chem. 19 5916
[37]
[38]	Sarkar S, Jana P K, Chaudhuri B K 2008 Appl. Phys. Lett. 92 022905
[39]
[40]	Zhang Z J, Xu F M, Tan Y 2009 Mater. Rev. 23 56 (in Chinese) [张志军、许富民、谭毅 2009 材料导报 23 56]
[41]
[42]
[43]	Costescu R M, Cahill D G, Fabreguette F H, Sechrist Z A, George S M 2004 Science 303 989

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