累积辐照影响静态随机存储器单粒子翻转敏感性的仿真研究

丁李利; 郭红霞; 陈伟; 闫逸华; 肖尧; 范如玉

doi:10.7498/aps.62.188502

摘要

基于解析分析对比了大尺寸与深亚微米尺度下静态随机存取存储器(static random access memory, SRAM)单元单粒子翻转敏感性的表征值及引入累积辐照后的变化趋势. 同时借助仿真模拟计算了0.18 μm工艺对应的六管SRAM单元在对应不同累积剂量情况下, 离子分别入射不同中心单管时的电学响应变化, 计算结果与解析分析所得推论相一致, 即只有当累积辐照阶段与单粒子作用阶段存储相反数值时, SRAM单元的单粒子翻转敏感性才会增强.

关键词:

Abstract

Single event upset vulnerabilities of static random access memory (SRAM) cells on the micron scale and deep sub-micron scale are characterized and analyzed under ionizing irradiation. Meanwhile, by means of three-dimentional simulation, electrical responses of 6-T SRAM cell with feature size 0.18 μm are calculated when ions are injected into the different central single transistors under the irradiotion with different deposited doses. The simulation results are consistent with the analysis conclusion: the single event upset vulnerability would increase only when the SRAM cell stores the same state as the one stored in the irradiation period.

Keywords:

作者及机构信息

1.
西北核技术研究所, 西安 710024;

2.
清华大学工程物理系, 北京 100084

Authors and contacts

1.
Northwest Institute of Nuclear Technology, Xi’an 710024, China;

2.
Department of Engineering Physics, Tsinghua University, Beijing 100084, China

参考文献

[1]	He B P, Ding L L, Yao Z B, Xiao Z G, Huang S Y, Wang Z J 2011 Acta Phys. Sin. 60 056105 (in Chinese) [何宝平, 丁李利, 姚志斌, 肖志刚, 黄绍艳, 王祖军 2011 物理学报 60 056105]
[2]	Zhang K Y, Guo H X, Luo Y H, He B P, Yao Z B, Zhang F Q, Wang Y M 2009 Acta Phys. Sin. 58 8651 (in Chinese) [张科营, 郭红霞, 罗尹虹, 何宝平, 姚志斌, 张凤祁, 王园明 2009 物理学报 58 8651]
[3]	Knudson A R, Campbell A B, Hammond E C 1983 IEEE Trans. Nucl. Sci. NS-30 4508
[4]	Campbell A B, Stapor W J 1984 IEEE Trans. Nucl. Sci. NS-31 1175
[5]	He C H, Geng B, Wang Y P, Peng H L, Yang H L, Chen X H, Li G Z 2002 Nucl. Electron. Detect. Technol. 22 228 (in Chinese) [贺朝会, 耿斌, 王燕萍, 彭宏论, 杨海亮, 陈晓华, 李国政 2002 核电子学与探测技术 22 228]
[6]	Schwank J R, Dodd P E, Shaneyfelt M R, Felix J A, Hash G L, Ferlet-Cavrois V, Paillet P, Baggio J, Tangyunong P, Blackmore E 2004 IEEE Trans. Nucl. Sci. 51 3692
[7]	Schwank J R, Shaneyfelt M R, Felix J A, Dodd P E, Baggio J, Ferlet-Cavrois V, Paillet P, Hash G L, Flores R S, Massengill L W, Blackmore E 2006 IEEE Trans. Nucl. Sci. 53 1772
[8]	Koga R, Yu P, Crawford K, George J, Zakrzewski M 2009 IEEE Radiation Effects Data Workshop Quebec, July 20-24, 2009 p127
[9]	Bhuva B L, Johnson Jr R L, Gyurcsik R S, Fernald K W, Kerns S E 1987 IEEE Trans. Nucl. Sci. NS-34 1414
[10]	Matsukawa T, Kishida A, Tanii T, Koh M, Horita K, Hara K, Shigeta B, Goto M, Matsuda S, Kuboyama S, Ohdomari I 1994 IEEE Trans. Nucl. Sci. 41 2071
[11]	Integrated Systems Engineering Inc, 2004 ISE TCAD Release 10.0 DESSIS manual, Switzerland

施引文献

[1]	He B P, Ding L L, Yao Z B, Xiao Z G, Huang S Y, Wang Z J 2011 Acta Phys. Sin. 60 056105 (in Chinese) [何宝平, 丁李利, 姚志斌, 肖志刚, 黄绍艳, 王祖军 2011 物理学报 60 056105]
[2]	Zhang K Y, Guo H X, Luo Y H, He B P, Yao Z B, Zhang F Q, Wang Y M 2009 Acta Phys. Sin. 58 8651 (in Chinese) [张科营, 郭红霞, 罗尹虹, 何宝平, 姚志斌, 张凤祁, 王园明 2009 物理学报 58 8651]
[3]	Knudson A R, Campbell A B, Hammond E C 1983 IEEE Trans. Nucl. Sci. NS-30 4508
[4]	Campbell A B, Stapor W J 1984 IEEE Trans. Nucl. Sci. NS-31 1175
[5]	He C H, Geng B, Wang Y P, Peng H L, Yang H L, Chen X H, Li G Z 2002 Nucl. Electron. Detect. Technol. 22 228 (in Chinese) [贺朝会, 耿斌, 王燕萍, 彭宏论, 杨海亮, 陈晓华, 李国政 2002 核电子学与探测技术 22 228]
[6]	Schwank J R, Dodd P E, Shaneyfelt M R, Felix J A, Hash G L, Ferlet-Cavrois V, Paillet P, Baggio J, Tangyunong P, Blackmore E 2004 IEEE Trans. Nucl. Sci. 51 3692
[7]	Schwank J R, Shaneyfelt M R, Felix J A, Dodd P E, Baggio J, Ferlet-Cavrois V, Paillet P, Hash G L, Flores R S, Massengill L W, Blackmore E 2006 IEEE Trans. Nucl. Sci. 53 1772
[8]	Koga R, Yu P, Crawford K, George J, Zakrzewski M 2009 IEEE Radiation Effects Data Workshop Quebec, July 20-24, 2009 p127
[9]	Bhuva B L, Johnson Jr R L, Gyurcsik R S, Fernald K W, Kerns S E 1987 IEEE Trans. Nucl. Sci. NS-34 1414
[10]	Matsukawa T, Kishida A, Tanii T, Koh M, Horita K, Hara K, Shigeta B, Goto M, Matsuda S, Kuboyama S, Ohdomari I 1994 IEEE Trans. Nucl. Sci. 41 2071
[11]	Integrated Systems Engineering Inc, 2004 ISE TCAD Release 10.0 DESSIS manual, Switzerland

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