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摘要: 从理论的角度分析了绝缘衬底对其上面半导体多晶膜激光熔化再结晶过程的影响, 发现低导热的绝缘层使产生固一液相变的临界激光功率有明显的降低.用喇曼光谱测量了激光再结晶SOI层中的应力. 应力的出现是多晶膜内曾经发生过固一液相的佐证.从这一思想出发, 对LPCVD方法制备的大量SOI 样品进行激光再结晶临界条件的研究, 证明了忽略绝缘层低热导影响的模型不能解释实验结果, 而经过修正的公式则可以较好地拟合实验结果,
Abstract: For poly-crystalline semiconduetor film deposited on an insulator and then recrystallized by a laser beam, the influence of the substrate upon recrystallization of the film was analyzed theoretically. We found the critical laser power necessary for solid-liquid phase transition to take place, will change to a lower value as the poor thermal conduction of insulating substrate being reasonably considered. It is well known that the existence of stress in recrystallized films may be taken as a criterion for melting process that undergoes during laser lrradiation. A large number of SOI samples prepared by LPCVD technology were studied after its laser recrystallization, to obtain the critical transition conditions through strass determination by use of Raman peak shifts. A comparison of the calculations based on the model taking low thermal conductance of the substrate into account with the experimental results showed its fitting is better than that with the influence of substrate being neglected.