THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H

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THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H

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WANG ZHI-CHAO, TENG MIN-KANG, ZHANG SHU-YI, GE WANG-DA, QIU SHU-YE

Acta Phys. Sin., 1988, 37(8): 1291-1297.

Abstract
The defects and the nonradiative recombination of photogenerated carriers in a-Si:H and a-SiNx:H films are studied by using infrared spectrometer, spectrophotometer, photoacoustic Spectrometer and positron annihilation life-time spectrometer from various respects.
Authors and contacts
WANG ZHI-CHAO¹,

TENG MIN-KANG¹,

ZHANG SHU-YI¹,

GE WANG-DA²,

QIU SHU-YE³

(1)南京大学物理系声学研究所; (2)南京无线电元件十七厂; (3)汕头大学物理系
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