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Preparation and properties of nano-structure Cu33N thin films

Wu Zhi-Guo Zhang Wei-Wei Bai Li-Feng Wang Jun Yan Peng-Xun

Preparation and properties of nano-structure Cu33N thin films

Wu Zhi-Guo, Zhang Wei-Wei, Bai Li-Feng, Wang Jun, Yan Peng-Xun
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Publishing process
  • Received Date:  23 December 2003
  • Accepted Date:  15 December 2004
  • Published Online:  19 April 2005

Preparation and properties of nano-structure Cu33N thin films

  • 1. 兰州大学等离子体与金属材料研究所,兰州 730000

Abstract: Copper nitride(Cu33N) thin films with nano-crystalline were deposite d on glass substrates at a temperature of 100℃ by DC magnetron sputtering with a columnar target. The structure of the Cu33N thin films was characterized by x-ray diffraction, x-ray photoelectron spectroscopy and atomic force microsco py. The results indicate that Cu33N thin films are composed of nanome ter grains with a cu bic crystal structure of anti-ReO33 type. The films have a uniform s mooth surf ace with only a roughness(Raa) of 17nm. The binding energy peaks of Cu2 p3/23/2, Cu2p1/21/2 and N1s were at 9327, 9527 and 3999eV respecti vely, and spin-orbit coupling energy gap of Cu2p was 20eV. The film thickness was determined by a profile step scanner, and its resistivity was measured usin g the four-probe method. The deposition rate and resistivity were found to chan ge with the nitrogen content.

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