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The effects of proton implant energy on threshold and output power of vertical cavity surface emitting laser

Mao Ming-Ming Xu Chen Wei Si-Min Xie Yi-Yang Liu Jiu-Cheng Xu Kun

The effects of proton implant energy on threshold and output power of vertical cavity surface emitting laser

Mao Ming-Ming, Xu Chen, Wei Si-Min, Xie Yi-Yang, Liu Jiu-Cheng, Xu Kun
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  • Received Date:  16 April 2012
  • Accepted Date:  14 May 2012
  • Published Online:  05 November 2012

The effects of proton implant energy on threshold and output power of vertical cavity surface emitting laser

  • 1. Key Laboratory of Optoelectronics Technology Ministry of Education, Beijing University of Technology, Beijing 100124, China
Fund Project:  Project supported by the National High Technology Research and Development Program of China (Grant No. 2008AA03Z402), the National Natural Science Foundation of China (Grant No. 61076044 ), and the Natural Science Foundation of Beijing, China (Grant Nos. 4092007, 4102003, 4112006).

Abstract: A method of balancing the output power and threshold current property of vertical cavity surface emitting laser is studied. The relationship between proton implantation energy and device performance is analyzed by simulation and experiment. It is found that a higher injection energy can destroy the active region, thus reducing the output power property. The threshold current will be increased since a lower injection energy may weaken the restriction on the injection current. The results indicate that 315 keV injection energy is the right choice for our device structure. The output power and threshold current obtained under 10 μm aperture are 1.7 mW and 4.3 mW, respectively.

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