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物理学报. 2007, 56(2): 863-870.
doi: 10.7498/aps.56.863.
1.3μm量子点垂直腔面发射激光器高频响应的优化设计
- 收稿日期: 2006-05-15
- 修回日期: 2006-08-09
- 刊出日期: 2007-01-26
English Abstract
Modulation response analysis of 1.3 μm quantum dot vertical-cavity surface-emitting lasers
- Received Date:
15 May 2006
- Accepted Date:
09 August 2006
- Published Online:
26 January 2007
Abstract: Some important parameters, such as gain, 3 dB bandwidth and threshold current of 1.3 μm quantum dot vertical-cavity surface-emitting laser (QD VCSEL) are theoretically investigated. Some methods are developed to improve the VCSEL's modulation response. Significant improvement are prediced for p-type modulation doping. In connection with the threshold characteristic, we found that a structure with short cavity, multilayer quantum dots stack, p-type modulation doping and double intracavity contact on an un-doped DBR is much better suited to high speed quantum dot VCSELs. The parasitic effects of the VCSEL are analyzed and the influence of packaging of the VCSEL on its modulation responds is analyzed.
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