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High polarization properties of single-photon emission from anisotropic InGaAs quantum dots

Zhou Hui-Jun Cheng Mu-Tian Liu Shao-Ding Wang Qu-Quan Zhan Ming-Sheng Xue Qi-Kun

High polarization properties of single-photon emission from anisotropic InGaAs quantum dots

Zhou Hui-Jun, Cheng Mu-Tian, Liu Shao-Ding, Wang Qu-Quan, Zhan Ming-Sheng, Xue Qi-Kun
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  • Received Date:  07 December 2004
  • Accepted Date:  04 February 2005
  • Published Online:  20 September 2005

High polarization properties of single-photon emission from anisotropic InGaAs quantum dots

  • 1. (1)武汉大学物理系,武汉 430072; (2)武汉大学物理系,武汉 430072;中国科学院物理研究所,国际量子结构中心,北京 100080; (3)中国科学院武汉物理与数学研究所,武汉 430071; (4)中国科学院物理研究所,国际量子结构中心,北京 100080

Abstract: The high-polarized single-photon emission in single anisotropic InGaAs quantum d ots excited by linear pulse excitation was discussed. The expression of the pola rization and cross relaxation between two orthogonal eigenstates was given. It w as revealed that the cross relaxation increased with intensity of the excitation , which resulted in the decrease of polarization factor with the input pulse a rea.

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