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Modulation response analysis of 1.3 μm quantum dot vertical-cavity surface-emitting lasers

Peng Hong-Ling Han Qin Yang Xiao-Hong Niu Zhi-Chuan

Modulation response analysis of 1.3 μm quantum dot vertical-cavity surface-emitting lasers

Peng Hong-Ling, Han Qin, Yang Xiao-Hong, Niu Zhi-Chuan
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  • PDF Downloads:  1641
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Publishing process
  • Received Date:  15 May 2006
  • Accepted Date:  09 August 2006
  • Published Online:  05 January 2007

Modulation response analysis of 1.3 μm quantum dot vertical-cavity surface-emitting lasers

  • 1. 中国科学院半导体研究所,北京 100083

Abstract: Some important parameters, such as gain, 3 dB bandwidth and threshold current of 1.3 μm quantum dot vertical-cavity surface-emitting laser (QD VCSEL) are theoretically investigated. Some methods are developed to improve the VCSEL's modulation response. Significant improvement are prediced for p-type modulation doping. In connection with the threshold characteristic, we found that a structure with short cavity, multilayer quantum dots stack, p-type modulation doping and double intracavity contact on an un-doped DBR is much better suited to high speed quantum dot VCSELs. The parasitic effects of the VCSEL are analyzed and the influence of packaging of the VCSEL on its modulation responds is analyzed.

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