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Research of breakdown characteristic of InP composite channel HEMT

Gong Min Li Xiao Zhang Hai-Ying Yin Jun-Jian Liu Liang Xu Jing-Bo Li Ming Ye Tian-Chun

Research of breakdown characteristic of InP composite channel HEMT

Gong Min, Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu Liang, Xu Jing-Bo, Li Ming, Ye Tian-Chun
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  • Abstract views:  3343
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  • Received Date:  14 November 2006
  • Accepted Date:  24 November 2006
  • Published Online:  20 July 2007

Research of breakdown characteristic of InP composite channel HEMT

  • 1. (1)四川大学物理科学与技术学院,成都 610064; (2)四川大学物理科学与技术学院,成都 610064;中国科学院微电子研究所,北京 100029; (3)中国科学院微电子研究所,北京 100029

Abstract: Density gradient quantum model has been used to analyse the breakdown characteristic of InP-based composite channel HEMT(high electron mobility transistor). The collision ionization in composite channel and quantum effect has been taken into consideration. We payed great attention to the relationship of on-state breakdown voltage with respect to the thickness of In0.7Ga0.3As channel, and promoted a method to enhance the on-state breakdown voltage. A commercial 2D-device simulation program. Sentaurus has been used to simulate the on-state breakdown voltage of the device. A comparison has been made between the result of simulated and measured data. The result shows that with the reduction of the thickness of In0.7Ga0.3As channel, on-state breakdown voltage of the device will be enhanced greatly without reducing saturation current, which has a significant meaning for promoting the power performance of InP-based HEMT.

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