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“Black silicon" antireflection thin film prepared by electrochemical etching

Liu Guang-You Tan Xing-Wen Yao Jin-Cai Wang Zhen Xiong Zu-Hong

“Black silicon" antireflection thin film prepared by electrochemical etching

Liu Guang-You, Tan Xing-Wen, Yao Jin-Cai, Wang Zhen, Xiong Zu-Hong
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  • Abstract views:  3884
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  • Cited By: 0
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  • Received Date:  15 March 2007
  • Accepted Date:  19 May 2007
  • Published Online:  15 January 2008

“Black silicon" antireflection thin film prepared by electrochemical etching

  • 1. 西南大学物理科学与技术学院,重庆 400715

Abstract: Solar cells and optical detection devices are often covered with antireflective surfaces to enhance their performance. An economical, fast, and easily operational electrochemical etching technique has been developed to realize a continuous uniform variation in the refractive index of porous silicon layer as a function of the etching depth. By using this technique a black silicon sample was fabricated, which has a reflectance below 5% over a broad band and a thickness below 1μm. The depression mechanism of the optical reflectance is analyzed by simulating the structure with the transfer matrix method. The simulated results give a good agreement with the experimental measurements.

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