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Nitrogen doped 4H-SiC homoepitaxial layers grown by CVD

Jia Ren-Xu Zhang Yi-Men Zhang Yu-Ming Wang Yue-Hu

Nitrogen doped 4H-SiC homoepitaxial layers grown by CVD

Jia Ren-Xu, Zhang Yi-Men, Zhang Yu-Ming, Wang Yue-Hu
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  • Received Date:  06 December 2007
  • Accepted Date:  08 May 2008
  • Published Online:  20 October 2008

Nitrogen doped 4H-SiC homoepitaxial layers grown by CVD

  • 1. 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安 710071

Abstract: Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates is performed at 1550℃, under the pressure of 100 mbar using the mbar step-controlled technique with rotation in the horizontal low-pressure hot-wall CVD (LP-HW-CVD) system to obtain high quality 4H-SiC epilayers. The surface morphology, structure and optical properties of the epilayers are characterized by SEM, AFM, FTIR and C-V measurement. The 4H-SiC epitaxial layer has a good crystalline structure and mirror-like surface with few surface defects. N type 4H-SiC epilayers are obtained by in-situ doping of N2.The uniformities of thickness are 1.74%, 1.99%, and 1.32%, and the uniformities of doping concentration are tested to be 3.37%, 2.39%, and 2.01%, respectively. The deviations in thickness and concentration between different samples are 1.54% and 3.63% under the same processing conditions, which shows that the process is repeatable and reliable.

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