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Zhang Lin, Ma Lin-Dong, Du Lin, Li Yan-Bo, Xu Xian-Feng, Huang Xin-Rong. Transient characteristics simulation of total ionizing dose effect on Si n-metal-oxide-semiconductor field effect transistor under different gate voltage. Acta Physica Sinica,
2023, 72(13): 138501.
doi: 10.7498/aps.72.20230207
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Nie Yong-Jie, Zhao Xian-Ping, Li Sheng-Tao. Influence of trap characteristics on DC surface flashover performance of low density polyethylene in vacuum. Acta Physica Sinica,
2019, 68(22): 227201.
doi: 10.7498/aps.68.20190741
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Yuan Duan-Lei, Min Dao-Min, Huang Yin, Xie Dong-Ri, Wang Hai-Yan, Yang Fang, Zhu Zhi-Hao, Fei Xiang, Li Sheng-Tao. Influence of filler content on trap and space charge properties of epoxy resin nanocomposites. Acta Physica Sinica,
2017, 66(9): 097701.
doi: 10.7498/aps.66.097701
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Ma Chao, Min Dao-Min, Li Sheng-Tao, Zheng Xu, Li Xi-Yu, Min Chao, Zhan Hai-Xia. Trap distribution and direct current breakdown characteristics in polypropylene/Al2O3 nanodielectrics. Acta Physica Sinica,
2017, 66(6): 067701.
doi: 10.7498/aps.66.067701
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Zhao Qi-Feng, Zhuang Yi-Qi, Bao Jun-Lin, Hu Wei. Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise model. Acta Physica Sinica,
2015, 64(13): 136104.
doi: 10.7498/aps.64.136104
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Chen Hai-Peng, Cao Jun-Sheng, Guo Shu-Xu. Temperature-dependent relation between junction temperature and 1/f noise in high power semiconductor laser. Acta Physica Sinica,
2013, 62(10): 104209.
doi: 10.7498/aps.62.104209
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Liu Yu-An, Zhuang Yi-Qi, Du Lei, Su Ya-Hui. 1/f noise characterization gamma irradiation of GaN-based blue light-emitting diode. Acta Physica Sinica,
2013, 62(14): 140703.
doi: 10.7498/aps.62.140703
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Li Yang, Guo Shu-Xu. A new method to estimate the parameter of 1/f Noise of high power semiconductor laser diode based on sparse decomposition. Acta Physica Sinica,
2012, 61(3): 034208.
doi: 10.7498/aps.61.034208
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Liao Rui-Jin, Zhou Tian-Chun, George Chen, Yang Li-Jun. A space charge trapping model and its parameters in polymeric material. Acta Physica Sinica,
2012, 61(1): 017201.
doi: 10.7498/aps.61.017201
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Sun Peng, Du Lei, Chen Wen-Hao, He Liang. A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noise. Acta Physica Sinica,
2012, 61(6): 067801.
doi: 10.7498/aps.61.067801
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Zhang Lin, Xiao Jian, Qiu Yang-Zhang, Cheng Hong-Liang. Radition effect on Ti/4H-SiC SBD of gamma-ray,electrons and neutrons. Acta Physica Sinica,
2011, 60(5): 056106.
doi: 10.7498/aps.60.056106
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Dai Yu, Zhang Jian-Xun. Reduction of 1/f noise in semiconductor devices based on wavelet transform and Wiener filter. Acta Physica Sinica,
2011, 60(11): 110516.
doi: 10.7498/aps.60.110516
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Li Sheng-Tao, Huang Qi-Feng, Sun Jian, Zhang Tuo, Li Jian-Ying. Influence of aggregation structure and traps on surface flashover of XLPE in vacuum. Acta Physica Sinica,
2010, 59(1): 422-429.
doi: 10.7498/aps.59.422
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Zhang Zhen-Guo, Gao Feng-Li, Guo Shu-Xu, Li Xue-Yan, Yu Si-Yao. A novel method to estimate the parameters of 1/f noise of semiconductor laser diodes. Acta Physica Sinica,
2009, 58(4): 2772-2775.
doi: 10.7498/aps.58.2772
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Yang Li-Xia, Du Lei, Bao Jun-Lin, Zhuang Yi-Qi, Chen Xiao-Dong, Li Qun-Wei, Zhang Ying, Zhao Zhi-Gang, He Liang. The effect of 60Co γ-ray irradiation on the 1/f noise of Schottky barrier diodes. Acta Physica Sinica,
2008, 57(9): 5869-5874.
doi: 10.7498/aps.57.5869
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Li Rui-Min, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin. A 1/f noise based research of radiation induced interface trap buildup process. Acta Physica Sinica,
2007, 56(6): 3400-3406.
doi: 10.7498/aps.56.3400
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Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang. Noise as a representation for reliability of light emitting diode. Acta Physica Sinica,
2006, 55(3): 1384-1389.
doi: 10.7498/aps.55.1384
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Sun Tao, Chen Xing-Guo, Hu Xiao-Ning, Li Yan-Jin. Analysis of surface leakage and 1/f noise on long-wavelength infrared HgCdTe photodiodes. Acta Physica Sinica,
2005, 54(7): 3357-3362.
doi: 10.7498/aps.54.3357
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Bao Jun-Lin, Zhuang Yi-Qi, Du Lei, Li Wei-Hua, Wan Chang-Xing, Zhang Ping. A unified model for 1/f noise in n-channel and p-channel MOSFETs. Acta Physica Sinica,
2005, 54(5): 2118-2122.
doi: 10.7498/aps.54.2118
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Zhang Ke-Yan. Phase transition speed research of metal material at laser irradiation medium strength. Acta Physica Sinica,
2004, 53(6): 1815-1819.
doi: 10.7498/aps.53.1815
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