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Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise

Peng Shao-Quan Du Lei Zhuang Yi-Qi Bao Jun-Lin He Liang Chen Wei-Hua

Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise

Peng Shao-Quan, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Chen Wei-Hua
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Publishing process
  • Received Date:  28 September 2007
  • Accepted Date:  10 April 2008
  • Published Online:  05 April 2008

Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise

  • 1. (1)西安电子科技大学技术物理学院,西安 710071; (2)西安电子科技大学微电子学院,西安 710071

Abstract: Based on metal-oxide-semiconductor field effect transistor (MOSFET) noise theory of carrier number fluctuation and mobility fluctuation, a quantitative mathematic model between pre-irradiation 1/f noise parameters and post-irradiation threshold voltage drift due to oxide traps and interface traps is established. It agrees well with the experimental results. This model shows that 1/f noise in MOSFET is priginates from the random trapping/detrapping processes between oxide traps and the channel, which causes fluctuations in both the number and the mobility of channel carriers. So pre-irradiation 1/f noise magnitude is directly proportional to post-irradiation oxide-trap charge. The results not only explain the correlation between MOSFET pre-irradiation 1/f noise power spectral density and radiation degradation in theory, but also provide the theory for forecasting MOSFET radiation-resistant capability.

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