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氮化镓基蓝光发光二极管伽马辐照的1/f噪声表征

刘宇安 庄奕琪 杜磊 苏亚慧

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氮化镓基蓝光发光二极管伽马辐照的1/f噪声表征

刘宇安, 庄奕琪, 杜磊, 苏亚慧

1/f noise characterization gamma irradiation of GaN-based blue light-emitting diode

Liu Yu-An, Zhuang Yi-Qi, Du Lei, Su Ya-Hui
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  • 通过电离辐照对氮化镓基蓝光发光二极管器件有源区光/暗电流产生机制的研究, 建立了电离辐照减小发光二极管有效输出功率电学模型.通过电离辐照对氮化镓基蓝光发光 二极管器件有源区1/f噪声影响机制的研究, 建立了电离辐照增大发光二极管1/f噪声的相关性模型.在I 1 A 的小注入区,空间电荷区的复合电流随辐照剂量的增加而增加. 同时, 随着电离辐照产生缺陷的增加, 1/f噪声幅度增大. 在 I 1 mA 的大注入条件下, 由于串联电阻的影响占主导地位,表面复合速率和电流随辐照剂量的增加而增加.同时, 随着电离辐照产生缺陷的增加, 1/f噪声幅度增大.根据辐照前后电流电压试验结果噪声测试结论, 证实了实验结论与理论推导结果的一致性. 在1 A I 510-5 A 的中值电流情况下, 由于高能载流子散射相关的迁移率涨落与辐照新增缺陷引起的载流子数涨落竞争机制, 随着辐照剂量增大, 1/f噪声在频域变化没有明显规律. 但是, 通过1/f噪声时域多尺度熵复杂度分析方法, 得出随着辐照剂量增大, 1/f噪声时域多尺度熵复杂度的结果. 最终证实1/f噪声幅度可以敏感地反映小注入和大注入情况下氮化镓基蓝光发光二极管电离辐照的可靠性. 噪声幅值越大, 则说明辐照感应Nit越高, 暗电流相关的复合电流越大, 光电流相关的扩散电流比例减少, 使得器件发光效率、光输出功率等性能参数下降, 继而影响器件可靠性, 造成失效率显著增大. 1/f噪声时域多尺度熵复杂度可以敏感地反映中值电流情况下氮 化镓基蓝光发光二极管的电离辐照可靠性.多尺度熵复杂度越大, 则说明辐照感应越多, 复合电流越大,器件可靠性越差.本文结论提供了一种基于 1/f噪声的氮化镓基蓝光发光二极管电离辐照可靠性表征方法.
    The electrical model that ionizing radiation reduces the effective power output of GaN-based blue light-emitting diode is proposed by investigating the light/dark current generation mechanism in active region of GaN-based blue light emitting diode device under ionizing irradiation. The model that the ionizing radiation increases the 1/f noise of GaN-based blue light-emitting diode device is proposed by studying the 1/f noise mechanism of the active region of GaN-based blue light-emitting diode device under exposure to ionizing radiation. In the small injection region (I1 A), the space charge region and the recombination current increase with irradiation dose increasing. Meanwhile, with the increase of the ionizing-irradiation-generated defects, the 1/f noise amplitude increases. In the large injection region (I1 mA), due to the dominant influence of the series resistance, the surface recombination velocity and current increases with irradiation dose increasing. Meanwhile, with the increase of ionizing-irradiation- generated defects, the 1/f noise amplitude increases. The I-V and 1/f noise test results before and after irradiation are in good agreement with theoretical results. In the middle injection region (1 A I 510-5 A), due to the competition between mobility fluctuation caused by energetic carrier scattering and the carrier number fluctuation caused by the newly irradiation-generated defects, as the radiation dose increases, 1/f noise has no significant changes in the frequency domain. However, through the 1/f noise time domain multiscale entropy complexity analysis, a conclusion can be drawn that with the increase of radiation dose, the 1/f noise domain multi-scale entropy becomes more complex. 1/f noise amplitude ultimately proves to be sensitive to reflect the reliability of GaN-based blue light-emitting diode ionizing irradiation in the case of small injection and large injection. The greater the noise amplitude, the higher the irradiation induction trap is, and the greater the generation-recombination current related to the dark current, the smaller the photocurrent related to the diffusion current is, so that the luminous efficiency of the device, the optical output power, and other performance parameters decrease, thus affecting the reliability of the device and resulting in the more failure devices. 1/f noise time domain multiscale entropy complexity can reflecte ionizing irradiation reliability of GaN-based blue light emitting diodes sensitively in the middle injection region.The more the multiscale entropy complexity, the bigger the irradiation induction generation-recombination current is, and the worse the reliability of the device is. The present study provides a method of characterizing the GaN-based blue light-emitting diode ionizing irradiation reliability according to 1/f noise.
    • 基金项目: 国家自然科学基金(批准号: 61076101)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61076101).
    [1]

    Rohit K, Sang Y H, Pearton S J 2005 Appl. Phys. Lett. 87 212107

    [2]

    Rohit K, Allums K K, Abernathy C R, Pearton S J 2004 Appl. Phys. Lett. 85 3131

    [3]

    Gaudreau F, Carlone C, Houdayer A, Khanna S M 2001 IEEE Trans. Nucl. Sci. 48 1778

    [4]

    Lia C S, Subramanian S 2003 IEEE Trans. Nucl. Sci. 50 1998

    [5]

    Khanna S M, Estan D, Houdayer A, Liu H C, Dudek R 2004 IEEE Trans. Nucl. Sci. 51 3585

    [6]

    Sawyer S, Rumyantsev S L, Shur M S 2006 J. Appl. Phys. 100 034504

    [7]

    Rumyantsev S L, Wetzel C, Shur M S 2006 J. Appl. Phys. 100 084506

    [8]

    Chen P X 2005 Radiation Effects on Semiconductor Devices and Integrated Circuits (Beijing: National Defense Industry Press) p20 (in Chinese) [陈盘训 2005 半导体器件和集成电路的辐射效应(北京:国防工业出版社) 第20页]

    [9]

    Khanna S M, Webb J, Tang H, Houdayer A J, Carlone C 2000 IEEE Trans. Nucl. Sci. 47 2322

    [10]

    Chang M H, Das D, Varde P V, Pecht M 2012 Microelectron. Reliab. 52 5762

    [11]

    Hu J, Du L, Zhuang Y Q 2006 Acta Phys. Sin. 55 1384 (in Chinese) [胡 瑾, 杜 磊, 庄奕琪 2006 物理学报 55 1384]

    [12]

    Jevtic M M 1995 Microelectron. Reliab. 35 1925

    [13]

    Kirton M J, Uren M J 1989 Adv. Phys. 38 367

    [14]

    Jiang S X, Abbott D, Dai Y S 2000 Miroelectron. Reliab. 40 171

    [15]

    He L, Du L, Zhuang Y Q 2008 Acta Phys. Sin. 57 6545 (in Chinese) [何亮, 杜磊, 庄奕琪 2008 物理学报 57 6545]

  • [1]

    Rohit K, Sang Y H, Pearton S J 2005 Appl. Phys. Lett. 87 212107

    [2]

    Rohit K, Allums K K, Abernathy C R, Pearton S J 2004 Appl. Phys. Lett. 85 3131

    [3]

    Gaudreau F, Carlone C, Houdayer A, Khanna S M 2001 IEEE Trans. Nucl. Sci. 48 1778

    [4]

    Lia C S, Subramanian S 2003 IEEE Trans. Nucl. Sci. 50 1998

    [5]

    Khanna S M, Estan D, Houdayer A, Liu H C, Dudek R 2004 IEEE Trans. Nucl. Sci. 51 3585

    [6]

    Sawyer S, Rumyantsev S L, Shur M S 2006 J. Appl. Phys. 100 034504

    [7]

    Rumyantsev S L, Wetzel C, Shur M S 2006 J. Appl. Phys. 100 084506

    [8]

    Chen P X 2005 Radiation Effects on Semiconductor Devices and Integrated Circuits (Beijing: National Defense Industry Press) p20 (in Chinese) [陈盘训 2005 半导体器件和集成电路的辐射效应(北京:国防工业出版社) 第20页]

    [9]

    Khanna S M, Webb J, Tang H, Houdayer A J, Carlone C 2000 IEEE Trans. Nucl. Sci. 47 2322

    [10]

    Chang M H, Das D, Varde P V, Pecht M 2012 Microelectron. Reliab. 52 5762

    [11]

    Hu J, Du L, Zhuang Y Q 2006 Acta Phys. Sin. 55 1384 (in Chinese) [胡 瑾, 杜 磊, 庄奕琪 2006 物理学报 55 1384]

    [12]

    Jevtic M M 1995 Microelectron. Reliab. 35 1925

    [13]

    Kirton M J, Uren M J 1989 Adv. Phys. 38 367

    [14]

    Jiang S X, Abbott D, Dai Y S 2000 Miroelectron. Reliab. 40 171

    [15]

    He L, Du L, Zhuang Y Q 2008 Acta Phys. Sin. 57 6545 (in Chinese) [何亮, 杜磊, 庄奕琪 2008 物理学报 57 6545]

计量
  • 文章访问数:  2081
  • PDF下载量:  414
  • 被引次数: 0
出版历程
  • 收稿日期:  2012-11-21
  • 修回日期:  2013-03-28
  • 刊出日期:  2013-07-05

氮化镓基蓝光发光二极管伽马辐照的1/f噪声表征

  • 1. 西安电子科技大学微电子学院, 西安 710071;
  • 2. 西安电子科技大学技术物理学院, 西安 710071
    基金项目: 

    国家自然科学基金(批准号: 61076101)资助的课题.

摘要: 通过电离辐照对氮化镓基蓝光发光二极管器件有源区光/暗电流产生机制的研究, 建立了电离辐照减小发光二极管有效输出功率电学模型.通过电离辐照对氮化镓基蓝光发光 二极管器件有源区1/f噪声影响机制的研究, 建立了电离辐照增大发光二极管1/f噪声的相关性模型.在I 1 A 的小注入区,空间电荷区的复合电流随辐照剂量的增加而增加. 同时, 随着电离辐照产生缺陷的增加, 1/f噪声幅度增大. 在 I 1 mA 的大注入条件下, 由于串联电阻的影响占主导地位,表面复合速率和电流随辐照剂量的增加而增加.同时, 随着电离辐照产生缺陷的增加, 1/f噪声幅度增大.根据辐照前后电流电压试验结果噪声测试结论, 证实了实验结论与理论推导结果的一致性. 在1 A I 510-5 A 的中值电流情况下, 由于高能载流子散射相关的迁移率涨落与辐照新增缺陷引起的载流子数涨落竞争机制, 随着辐照剂量增大, 1/f噪声在频域变化没有明显规律. 但是, 通过1/f噪声时域多尺度熵复杂度分析方法, 得出随着辐照剂量增大, 1/f噪声时域多尺度熵复杂度的结果. 最终证实1/f噪声幅度可以敏感地反映小注入和大注入情况下氮化镓基蓝光发光二极管电离辐照的可靠性. 噪声幅值越大, 则说明辐照感应Nit越高, 暗电流相关的复合电流越大, 光电流相关的扩散电流比例减少, 使得器件发光效率、光输出功率等性能参数下降, 继而影响器件可靠性, 造成失效率显著增大. 1/f噪声时域多尺度熵复杂度可以敏感地反映中值电流情况下氮 化镓基蓝光发光二极管的电离辐照可靠性.多尺度熵复杂度越大, 则说明辐照感应越多, 复合电流越大,器件可靠性越差.本文结论提供了一种基于 1/f噪声的氮化镓基蓝光发光二极管电离辐照可靠性表征方法.

English Abstract

参考文献 (15)

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