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Influences of deposition rate and oxygen partial pressure on residual stress of HfO2 films

Cen Min Zhang Yue-Guang Chen Wei-Lan Gu Pei-Fu

Influences of deposition rate and oxygen partial pressure on residual stress of HfO2 films

Cen Min, Zhang Yue-Guang, Chen Wei-Lan, Gu Pei-Fu
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  • Received Date:  17 November 2008
  • Accepted Date:  03 February 2009
  • Published Online:  05 May 2009

Influences of deposition rate and oxygen partial pressure on residual stress of HfO2 films

  • 1. (1)复旦大学电光源与照明工程学系,上海 200433; (2)浙江大学现代光学仪器国家重点实验室,杭州 310027

Abstract: HfO2 films were prepared by electron beam evaporation on K9 glass. The residual stresse was measured by viewing the substrate deflection using ZYGO interferometer. The influences of deposition rate and oxygen partial pressure on the residual stress were studied. The results show that all the residual stresses are tensile stresses. The packing density of films increases while the residual stress decreases with the increasing deposition rates and the decreasing oxygen partial pressure. The microstructure of the HfO2 films was inspected by X-ray diffraction (XRD). The relationship between the stress and the microstructure was also discussed.

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