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Electroluminescence from Si-rich SiNx/N-rich SiNy multilayer light-emitting devices

Dong Heng-Ping Wang Dan-Qing Chen Kun-Ji Ding Hong-Lin Xu Jun Li Wei Ma Zhong-Yuan Huang Rui

Electroluminescence from Si-rich SiNx/N-rich SiNy multilayer light-emitting devices

Dong Heng-Ping, Wang Dan-Qing, Chen Kun-Ji, Ding Hong-Lin, Xu Jun, Li Wei, Ma Zhong-Yuan, Huang Rui
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Publishing process
  • Received Date:  30 July 2008
  • Accepted Date:  16 September 2008
  • Published Online:  20 March 2009

Electroluminescence from Si-rich SiNx/N-rich SiNy multilayer light-emitting devices

  • 1. (1)南京大学物理系,固体微结构物理国家重点实验室,南京 210093; (2)南京大学物理系,固体微结构物理国家重点实验室,南京 210093;韩山师范学院物理与电子工程系,潮州 521041

Abstract: SiN-based multilayer light-emitting devices, which employed Si-rich SiNx/N-rich SiNy multilayer as luminescence active layer, were fabricated by plasma enhanced chemical vapor deposition (PECVD). Strong visible electroluminescence (EL) from the devices was observed at room temperature. By adjusting the Si/N ratio of the barrier layer, the effect of barrier on the electroluminescence properties was further investigated. The experimental results show that the performance of the devices can be significantly improved by controlling the Si/N ratio of the barrier layer.

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