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Fabrication of transparent conductive AZO (ZnO:Al) film by plasma enhanced chemical vapor deposition

Chen Zhao-Quan Liu Ming-Hai Liu Yu-Ping Chen Wei Luo Zhi-Qing Hu Xi-Wei

Fabrication of transparent conductive AZO (ZnO:Al) film by plasma enhanced chemical vapor deposition

Chen Zhao-Quan, Liu Ming-Hai, Liu Yu-Ping, Chen Wei, Luo Zhi-Qing, Hu Xi-Wei
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  • Received Date:  30 August 2008
  • Accepted Date:  17 October 2008
  • Published Online:  05 March 2009

Fabrication of transparent conductive AZO (ZnO:Al) film by plasma enhanced chemical vapor deposition

  • 1. 华中科技大学电气与电子工程学院,核聚变与电磁新技术教育部重点实验室,武汉 430074

Abstract: AZO(ZnO:Al) polycrystalline thin films with strong adhesion to the substrate, as low as 89 Ω of sheet electronic resistivity and as high as 79% of visible light transmittance,are fabricated by PECVD (plasma enhanced chemical vapor deposition) method on glass and silicon substrate. The AZO film fabricated by PECVD is a useful attempt. The AZO transparent conductive film has the good photovoltaic properties like that of ITO (In2O3: Sn); moreover, it is cheap, more nontoxic, and more stable in hydrogen plasma environment than ITO. The results obtained are very important to the selection of the technical conditions.

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