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物理学报. 2001, 50(3): 566-571.
doi: 10.7498/aps.50.566.
电子回旋共振等离子体增强化学气相沉积a-CFx薄膜的化学键结构
- 收稿日期: 2000-08-22
- 修回日期: 2000-10-10
- 刊出日期: 2001-03-20
摘要: 使用CHF3和C6H6混合气体做气源,在一个电子回旋共振等离子体增强化学气相沉积装置中制备了氟化非晶碳(a-CFx)薄膜.利用发射光谱研究了等离子体中形成的各种碳氟、碳氢基团随放电宏观参量的变化规律,对薄膜做了傅里叶变换红外光谱和X射线光电子能谱分析,证实等离子体中的CF2,CF和CH基团是控制薄膜生长、碳/氟成分比和化学键结构的主要前驱物
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关键词:
- 氟化非晶碳薄膜 /
- 电子回旋共振等离子体
English Abstract
CHEMICAL BONDING STRUCTURE OF FLUORINATED AMORPHOUS CARBON FILMS PREPARED BY ELECTRON CYCLOTRON RESONANCE PLASMA CHEMICAL VAPOR DEPOSITION
- Received Date:
22 August 2000
- Accepted Date:
10 October 2000
- Published Online:
20 March 2001
Abstract: The a-C∶Fx films with low dielectric constant has been studied,considering that they can be used for interlayer dielectric in ultra-large integrated circuits.These films were deposited by using electron cyclotron resonance plasma reactor with CHF3 and C6H6 mixture as source gas.The effects of microwave power,pressure and CHF3/C6H6 ratios on the film deposition rates have been investigated.The fluorocarbon and hydrocarbon radical species in the plasma discharges were monitored by the optical emission spectra.The structural properties of the films were characterized by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy.A relationship between the radical species in the discharge plasma and bonding structure of the films is analysed.It demonstrates that CF2,CF and CH radicals play the important roles in the forming of films.
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Keywords:
- a-CFx film /
- electron cyclotron resonance
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