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The vacancy defect clusters in polycrystalline pure aluminum induced by high-current pulsed electron beam

Guan Qing-Feng Cheng Du-Qing Qiu Dong-Hua Zhu Jian Wang Xue-Tao Cheng Xiu-Wei

The vacancy defect clusters in polycrystalline pure aluminum induced by high-current pulsed electron beam

Guan Qing-Feng, Cheng Du-Qing, Qiu Dong-Hua, Zhu Jian, Wang Xue-Tao, Cheng Xiu-Wei
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  • Received Date:  22 October 2008
  • Accepted Date:  10 December 2008
  • Published Online:  20 July 2009

The vacancy defect clusters in polycrystalline pure aluminum induced by high-current pulsed electron beam

  • 1. 江苏大学材料科学与工程学院,镇江 212013

Abstract: The specimens of polycrystalline pure aluminum were irradiated with high-current pulsed electron beam (HCPEB). The microstructure of vacancy defect clusters has been investigated in detail by using transmission electron microscopy (TEM). The results reveal that large numbers of vacancy cells including dislocation loop and even stacking fault tetrahedra (SFT) can be formed in the specimens of polycrystalline pure aluminum irradiated with HCPEB. For the specimen irradiated with one pulse, vacancy dislocation loops were formed in the vacancy cells. SFTs became the dominating structures after five pulses. For the specimen irradiated with ten pulses, dislocation loops were frequently present and SFTs were only formed in some local zones of vacancy cells. In the vicinity of SFT formation, dislocation-free or very low dislocation densities were observed. It is suggested that high stress and strain rate induced by rapid heating and cooling due to HCPEB irradiation could cause the shifting of whole atomic planes synchronously. This is the more probable mechanism of the formation of SFTs.

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