Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Characteristics of a SiC SBD with semi-superjunction structure

Yang Yin-Tang Geng Zhen-Hai Duan Bao-Xing Jia Hu-Jun Yu Cen Ren Li-Li

Characteristics of a SiC SBD with semi-superjunction structure

Yang Yin-Tang, Geng Zhen-Hai, Duan Bao-Xing, Jia Hu-Jun, Yu Cen, Ren Li-Li
PDF
Get Citation
Metrics
  • Abstract views:  3781
  • PDF Downloads:  1470
  • Cited By: 0
Publishing process
  • Received Date:  30 March 2009
  • Accepted Date:  13 May 2009
  • Published Online:  15 January 2010

Characteristics of a SiC SBD with semi-superjunction structure

  • 1. 西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安 710071

Abstract: A novel SiC semi-superjunction-Schottky Barrier Diode (Semi-SJ-SBD) structure is proposed, which is the combination of super-junction (SJ) structure and conventional drift region structure. The proposed structure can significantly reduce the specific on-resistance (Ron-sp) and improve the forward characteristics. The breakdown voltage (VB) and specific on-resistance (Ron-sp) in different SJ depth and width are studied using two-dimensional simulator Medici and compared with conventional SiC SBD. The results show that Ron-sp is greatly reduced (greater than 10%) with VB unchanged (less than 4%) when the SJ width is chosen as 2—3 μm and SJ depth is deeper than 5 μm.

Catalog

    /

    返回文章
    返回