-
为了提高小尺寸绝缘体上硅(SOI)器件的击穿电压, 同时降低器件比导通电阻, 提出了一种具有L型源极场板的双槽SOI高压器件新结构. 该结构具有如下特征: 首先, 采用了槽栅结构, 使电流纵向传导面积加宽, 降低了器件的比导通电阻; 其次, 在漂移区引入了SiO2槽型介质层, 该介质层的高电场使器件的击穿电压显著提高; 第三, 在槽型介质层中引入了L型源极场板, 该场板调制了漂移区电场, 使优化漂移区掺杂浓度大幅增加, 降低了器件的比导通电阻. 二维数值仿真结果表明: 与传统SOI结构相比, 在相同器件尺寸时, 新结构的击穿电压提高了151%, 比导通电阻降低了20%; 在相同击穿电压时, 比导通电阻降低了80%. 与相同器件尺寸的双槽SOI结构相比, 新结构保持了双槽SOI结构的高击穿电压特性, 同时, 比导通电阻降低了26%.
[1] Luo X R, Zhang B, Li Z J 2008 IEEE Trans. Electron Dev. 55 1756
[2] Wu L J, Hu S D, Zhang B, Li Z J 2011 Chin. Phys. B 20 027101
[3] Zhou K, Luo X R, Fan Y H, Luo Y C, Hu X R, Zhang B 2013 Chin. Phys. B 22 067306
[4] Hu C 1979 IEEE Trans. Electron Dev. 26 243
[5] Zhang B, Wang W L, Chen W J, Li Z H, Li Z J 2009 IEEE Electron Dev. Lett. 30 849
[6] Yang F J, Gong J, Su R Y, Huo K H, Tsai C L, Cheng C C, Liou R H, Tuan H C, Huang C F 2013 IEEE Trans. Electron Dev. 60 2847
[7] Son W S, Sohn Y H, Choi S Y 2003 Electron. Lett. 39 1760
[8] Zhang W T, Qiao M, Wu L J, Ye K, Wang Z, Wang Z G, Luo X R, Zhang S, Su W, Zhang B, Li Z J 2013 Proceedings of the 25th International Symposium on Power Semiconductor Devices & ICs Kanazawa, Japan, May 26-30 2013 p329
[9] Fan J, Zhang B, Luo X R, Li Z J 2013 Chin. Phys. B 22 118502
[10] Wang Z G, Zhang B, Fu Q, Xie G, Li Z J 2012 IEEE Electron Dev. Lett. 33 703
[11] Kim S L, Yang H Y, Choi Y I 2000 Proceedings of the 22nd International Conference on Microelectronics Nis, Serbia, May 14-17, 2000 p641
[12] Luo X R, Luo Y C, Fan Y, Hu G Y, Wang X W, Zhang Z Y, Fan Y H, Cai J Y, Wang P, Zhou K 2013 Chin. Phys. B 22 027304
[13] Shi Y M, Liu J Z, Yao S Y, Ding Y H 2014 Acta Phys. Sin. 63 107302 (in Chinese) [石艳梅, 刘继芝, 姚素英, 丁燕红 2014 物理学报 63 107302]
[14] Ge R, Luo X R, Jiang Y H, Zhou K, Wang P, Wang Q, Wang Y G, Zhang B, Li Z J 2012 J. Semicond. 33 074005
[15] Fujishima N, Sugi A, Kajiwara S, Matsubara K, Nagayasu Y, Salama C A T 2002 IEEE Trans. Electron Dev. 49 1462
[16] Luo X R, Fan J, Wang Y G, Lei T F, Qiao M, Zhang B, Udrea F 2011 IEEE Electron Dev. Lett. 32 185
[17] Luo X R, Lei T F, Wang Y G, Yao G L, Jiang Y H, Zhou K, Wang P, Zhang Z Y 2012 IEEE Trans. Electron Dev. 59 504
[18] Hu X R, Zhang B, Luo X R, Jiang Y H, Li Z J 2012 Electron. Lett. 48 1235
[19] Luo X R, Yao G L, Zhang Z Y, Jiang Y H, Zhou K, Wang P, Wang Y G 2012 Chin. Phys. B 21 068501
-
[1] Luo X R, Zhang B, Li Z J 2008 IEEE Trans. Electron Dev. 55 1756
[2] Wu L J, Hu S D, Zhang B, Li Z J 2011 Chin. Phys. B 20 027101
[3] Zhou K, Luo X R, Fan Y H, Luo Y C, Hu X R, Zhang B 2013 Chin. Phys. B 22 067306
[4] Hu C 1979 IEEE Trans. Electron Dev. 26 243
[5] Zhang B, Wang W L, Chen W J, Li Z H, Li Z J 2009 IEEE Electron Dev. Lett. 30 849
[6] Yang F J, Gong J, Su R Y, Huo K H, Tsai C L, Cheng C C, Liou R H, Tuan H C, Huang C F 2013 IEEE Trans. Electron Dev. 60 2847
[7] Son W S, Sohn Y H, Choi S Y 2003 Electron. Lett. 39 1760
[8] Zhang W T, Qiao M, Wu L J, Ye K, Wang Z, Wang Z G, Luo X R, Zhang S, Su W, Zhang B, Li Z J 2013 Proceedings of the 25th International Symposium on Power Semiconductor Devices & ICs Kanazawa, Japan, May 26-30 2013 p329
[9] Fan J, Zhang B, Luo X R, Li Z J 2013 Chin. Phys. B 22 118502
[10] Wang Z G, Zhang B, Fu Q, Xie G, Li Z J 2012 IEEE Electron Dev. Lett. 33 703
[11] Kim S L, Yang H Y, Choi Y I 2000 Proceedings of the 22nd International Conference on Microelectronics Nis, Serbia, May 14-17, 2000 p641
[12] Luo X R, Luo Y C, Fan Y, Hu G Y, Wang X W, Zhang Z Y, Fan Y H, Cai J Y, Wang P, Zhou K 2013 Chin. Phys. B 22 027304
[13] Shi Y M, Liu J Z, Yao S Y, Ding Y H 2014 Acta Phys. Sin. 63 107302 (in Chinese) [石艳梅, 刘继芝, 姚素英, 丁燕红 2014 物理学报 63 107302]
[14] Ge R, Luo X R, Jiang Y H, Zhou K, Wang P, Wang Q, Wang Y G, Zhang B, Li Z J 2012 J. Semicond. 33 074005
[15] Fujishima N, Sugi A, Kajiwara S, Matsubara K, Nagayasu Y, Salama C A T 2002 IEEE Trans. Electron Dev. 49 1462
[16] Luo X R, Fan J, Wang Y G, Lei T F, Qiao M, Zhang B, Udrea F 2011 IEEE Electron Dev. Lett. 32 185
[17] Luo X R, Lei T F, Wang Y G, Yao G L, Jiang Y H, Zhou K, Wang P, Zhang Z Y 2012 IEEE Trans. Electron Dev. 59 504
[18] Hu X R, Zhang B, Luo X R, Jiang Y H, Li Z J 2012 Electron. Lett. 48 1235
[19] Luo X R, Yao G L, Zhang Z Y, Jiang Y H, Zhou K, Wang P, Wang Y G 2012 Chin. Phys. B 21 068501
| 引用本文: |
|
| Citation: |
|
计量
- 文章访问数: 561
- PDF下载量: 405
- 被引次数: 0
下载: