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Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector

Deng Yi Zhao De-Gang Wu Liang-Liang Liu Zong-Shun Zhu Jian-Jun Jiang De-Sheng Zhang Shu-Ming Liang Jun-Wu

Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector

Deng Yi, Zhao De-Gang, Wu Liang-Liang, Liu Zong-Shun, Zhu Jian-Jun, Jiang De-Sheng, Zhang Shu-Ming, Liang Jun-Wu
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  • Received Date:  29 March 2010
  • Accepted Date:  08 July 2010
  • Published Online:  05 June 2010

Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector

  • 1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China

Abstract: We have investigated the effect of AlGaN layer parameter on the ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector and its physical mechanism. Through the simulation, it is found that the decrease of AlGaN background concentration has a positive effect on device’s ultraviolet quantum efficiency. When AlGaN layer background concentration cannot be reduced, the decrease of its thickness can ensure the efficiency. Besides, interfical state should be minimized during materials growth and device fabrication. In addition, small reverse bias voltage can greatly increase ultraviolet quantum efficiency. All these phenomena may be mainly attributed to the existence of the back-to-back heterojunction and the opposite electrical field. It is suggested that we need to adjust structural parameters to obtain high quantum efficiency according to the materials quality in device design.

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