Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Investigation on the deoxidation process of SrO/Si(100) surface

Du Wen-Han

Investigation on the deoxidation process of SrO/Si(100) surface

Du Wen-Han
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  3335
  • PDF Downloads:  619
  • Cited By: 0
Publishing process
  • Received Date:  01 July 2009
  • Accepted Date:  23 August 2009
  • Published Online:  15 May 2010

Investigation on the deoxidation process of SrO/Si(100) surface

  • 1. 中国科学技术大学微尺度物质科学国家实验室,合肥 230026

Abstract: Using high temperature scanning tunneling microscopy (STM) and XPS, we investigated the dynamic process of SrO/Si(100) changing to Sr/Si(100) reconstructed surface, which plays a critical role in the growth of crystalline oxide on silicon substrate. During this process we find some interesting phenomenan: there appears crystalline SrO on Si(100) substrate at low annealing temperature of 500 ℃; at higher annealing temperature of 550—590 ℃, the oxygen in the SrO/Si(100) interface will react with silicon and form volatile SiO, leading the surface with a large quantity of line vacancies. In the later case, there appears abnormal metallic property of this surface, which results from dangling bonds of silicon atoms in the surface.

Reference (15)

Catalog

    /

    返回文章
    返回