Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Power characteristics of SiC bipolar-mode JFET

Zhang Lin Yang Fei Xiao Jian Gu Wen-Ping Qiu Yan-Zhang

Power characteristics of SiC bipolar-mode JFET

Zhang Lin, Yang Fei, Xiao Jian, Gu Wen-Ping, Qiu Yan-Zhang
PDF
Get Citation
Metrics
  • Abstract views:  3993
  • PDF Downloads:  716
  • Cited By: 0
Publishing process
  • Received Date:  05 December 2010
  • Accepted Date:  17 January 2011
  • Published Online:  15 October 2011

Power characteristics of SiC bipolar-mode JFET

  • 1. School of Electronic and Control Engineering, Road Traffic Detection and Equipment Engineering Research Center, Chang'an University, Xi’an 710064, China;
  • 2. The National Key Laboratory of ASIC, The 13th Research Institute, CETC, Shijiazhuang 050051, China

Abstract: The operational mechanism of normally-off type bipolar-mode SiC junction field effect transistor (BJFET) is studied by using a two-dimensional numerical model. Compared with the unipolar-mode SiC JFET, the bipolar-mode can reduce the on-state resistor of the SiC JFET effectively and compromise between the on-state and off-state characteristic of the device. The simulation resluts also show that switching time of BJFET increases remarkably.

Reference (22)

Catalog

    /

    返回文章
    返回