改进型异质栅对深亚微米栅长碳化硅MESFET特性影响

宋坤; 柴常春; 杨银堂; 贾护军; 陈斌; 马振洋

doi:10.7498/aps.61.177201

摘要

基于器件物理分析方法,结合高场迁移率、肖特基栅势垒降低、势垒隧穿等物理模型, 分析了改进型异质栅结构对深亚微米栅长碳化硅肖特基栅场效应晶体管沟道电势、夹断电压以及栅下电场分布的影响.通过与传统栅结构器件特性的对比表明, 异质栅结构在碳化硅肖特基栅场效应晶体管的沟道电势中引入了多阶梯分布,加强了近源端电场; 另一方面,相比于双栅器件,改进型异质栅器件沟道最大电势的位置远离源端, 因此载流子在沟道中加速更快,在一定程度上屏蔽了漏压引起的电势变化,更好抑制了短沟道效应. 此外,研究了不同结构参数的异质栅对短沟道器件特性的影响,获得了优化的设计方案, 减小了器件的亚阈值倾斜因子.为发挥碳化硅器件在大功率应用中的优势,设计了非对称异质栅结构, 改善了栅电极边缘的电场分布,提高了小栅长器件的耐压.

关键词:

Abstract

Based on the device operation mechanism and physical model, effects of the improved hetero-material-gate (HMG) approach on deep sub-micron silicon carbide (SiC) metal-semiconductor field-effect transistor (MESFET) are analyzed. By comparing with the conventional MESFET, it is shown that the improved HMG approach induces a multi-stepped distribution of the potential in the channel, leading to an enhanced electric field at the source. Meanwhile, the position of the maximum of the channel potential is changed to the drain side compared with the dual-material-gate (DMG) device, thus the carriers in the channel are accelerated more efficiently and the variation of potential caused by drain voltage is eliminated to a certain degree, resulting in a better restraint in short-channel effect. Also, different technological parameters are designed to study the dependence of the device performance and an optimization plan is obtained, leading to a decreased sub-threshold swing. In addition, asymmetric gate structures are designed for high power application, achieving an improved distribution of the electric field at the gate edge and an enhanced breakdown voltage of the small scale device.

Keywords:

silicon carbide /
metal-semiconductor field-effect transistor /
hetero-material-gate /
short-channel effect

作者及机构信息

1.
西安电子科技大学微电子学院, 教育部宽禁带半导体材料与器件重点实验室, 西安 710071

基金项目: 国家杰出青年基金(批准号: 60725415)和国家部委预研项目(批准号: 51308030201)资助的课题.

Authors and contacts

1.
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, China

Funds: Project supported by the National Science Fund for Distinguished Young Scholars of China (Grant No. 60725415), and the Pre-research Foundation of China.(Grant No. 51308030201).

参考文献

[1]	Clarke R C, Palmour J W 2002 Proc. IEEE. 90 987
[2]	Lü H L, Zhang Y M, Zhang Y M 2004 IEEE Trans. Electr. Dev. 51 1065
[3]	Lü H L, Zhang Y M, Zhang Y M, Che Y, Cao Q J, Zheng S J 2008 Appl. Phys. A 91 287
[4]	Lü H L, Zhang Y M, Zhang Y M, Che Y 2008 Chin. Phys. B 17 1410
[5]	Cao Q J, Zhang Y M, Zhang Y M 2008 Chin. Phys. B 17 4622
[6]	Lü H L, Zhang Y M, Che Y, Wang Y H, Chen L 2008 Acta Phys. Sin. 57 2871 (in Chinese) [吕红亮, 张义门, 车勇, 王悦湖, 陈亮 2008 物理学报 57 2871]
[7]	Lü H L, Zhang Y M, Zhang Y M, Zhang T 2009 Sol. St. Electr. 53 285
[8]	Deng X C, Zhang B, Zhang Y R, Wang Y, Li Z J 2011 Chin. Phys. B 20 017304-1
[9]	Zhu C L, Rusli, Zhao P 2007 Sol. St. Electr. 51 343
[10]	Chen G, Qin Y F, Bai S, Wu P, Li Z Y, Chen Z, Han P 2010 Sol. St. Electr. 54 353
[11]	Henry H G, Augustine G, DeSalvo G C 2004 IEEE Trans. Electr. Dev. 51 839
[12]	Hjelmgren H, Allerstam F, Andersson K, Nilsson P AA, Rorsman N 2010 IEEE Trans. Electr. Dev. 57 729
[13]	Cao Q J, Zhang Y M, Jia L X 2009 Chin. Phys. B 18 4456
[14]	Ogura S, Tsang P J, Walker W W 1980 IEEE Trans. Electr. Dev. 27 1359
[15]	Binari S C, Klein P B, Kazior T E 2002 Proc. IEEE. 90 1048
[16]	Hilton K P, Uren M J, Hayes D G 2002 Mater. Sci. Forum. 389-393 1387
[17]	Mitra S, Rao M V, Jones A K 2004 Sol. St. Electr. 48 143
[18]	Long W, Qu H, Kuo J M, Chin K K 1999 IEEE Trans. Electr. Dev. 46 865
[19]	Hashemi P, Behnam A, Fathi E, Afzali-Kusha A, Nokali M E 2005 Sol. St. Electr. 49 1341
[20]	Wakabayashi H, Saito Y, Takeuchi K, Mogami T, Kunio T 2001 IEEE Trans. Electr. Dev. 48 2363
[21]	Roschke M, Schwierz F 2001 IEEE Trans. Electr. Dev. 48 1442
[22]	Grivickas P, Galeckas A, Linnros J, Syvajarvi M, Yakimova R, Grivickas V, Tellefsen J A 2001 Mater. Sci. in Semiconductor Processing. 4 191
[23]	DESSIS-ISE Manual Ver. 10.0, ISE
[24]	Manabu A, Hirotake H, Shuichi O, Hiroshi S, Makoto O 2003 Elecronics and Communications in Japan Part 2. 86 386
[25]	Itoh A, Matsunami H 1997 Physica Status Solidi A-Applied Research. 162 389
[26]	Hatayama T, Kawahito H, Kijima H, Uraoka Y, Fuyuki T 2002 Mater. Sci. Forum. 389-393 925
[27]	Roccaforte F, Via L, Raineri F, Musumeci V, Calcagno P, Condorelli L G G 2003 Appl. Phys. A: Mat. Sci. & Proc. 77 827
[28]	Lee S K, Zetterling C M, Östling M 2000 J. Appl. Phys. 87 8039

施引文献

[1]	Clarke R C, Palmour J W 2002 Proc. IEEE. 90 987
[2]	Lü H L, Zhang Y M, Zhang Y M 2004 IEEE Trans. Electr. Dev. 51 1065
[3]	Lü H L, Zhang Y M, Zhang Y M, Che Y, Cao Q J, Zheng S J 2008 Appl. Phys. A 91 287
[4]	Lü H L, Zhang Y M, Zhang Y M, Che Y 2008 Chin. Phys. B 17 1410
[5]	Cao Q J, Zhang Y M, Zhang Y M 2008 Chin. Phys. B 17 4622
[6]	Lü H L, Zhang Y M, Che Y, Wang Y H, Chen L 2008 Acta Phys. Sin. 57 2871 (in Chinese) [吕红亮, 张义门, 车勇, 王悦湖, 陈亮 2008 物理学报 57 2871]
[7]	Lü H L, Zhang Y M, Zhang Y M, Zhang T 2009 Sol. St. Electr. 53 285
[8]	Deng X C, Zhang B, Zhang Y R, Wang Y, Li Z J 2011 Chin. Phys. B 20 017304-1
[9]	Zhu C L, Rusli, Zhao P 2007 Sol. St. Electr. 51 343
[10]	Chen G, Qin Y F, Bai S, Wu P, Li Z Y, Chen Z, Han P 2010 Sol. St. Electr. 54 353
[11]	Henry H G, Augustine G, DeSalvo G C 2004 IEEE Trans. Electr. Dev. 51 839
[12]	Hjelmgren H, Allerstam F, Andersson K, Nilsson P AA, Rorsman N 2010 IEEE Trans. Electr. Dev. 57 729
[13]	Cao Q J, Zhang Y M, Jia L X 2009 Chin. Phys. B 18 4456
[14]	Ogura S, Tsang P J, Walker W W 1980 IEEE Trans. Electr. Dev. 27 1359
[15]	Binari S C, Klein P B, Kazior T E 2002 Proc. IEEE. 90 1048
[16]	Hilton K P, Uren M J, Hayes D G 2002 Mater. Sci. Forum. 389-393 1387
[17]	Mitra S, Rao M V, Jones A K 2004 Sol. St. Electr. 48 143
[18]	Long W, Qu H, Kuo J M, Chin K K 1999 IEEE Trans. Electr. Dev. 46 865
[19]	Hashemi P, Behnam A, Fathi E, Afzali-Kusha A, Nokali M E 2005 Sol. St. Electr. 49 1341
[20]	Wakabayashi H, Saito Y, Takeuchi K, Mogami T, Kunio T 2001 IEEE Trans. Electr. Dev. 48 2363
[21]	Roschke M, Schwierz F 2001 IEEE Trans. Electr. Dev. 48 1442
[22]	Grivickas P, Galeckas A, Linnros J, Syvajarvi M, Yakimova R, Grivickas V, Tellefsen J A 2001 Mater. Sci. in Semiconductor Processing. 4 191
[23]	DESSIS-ISE Manual Ver. 10.0, ISE
[24]	Manabu A, Hirotake H, Shuichi O, Hiroshi S, Makoto O 2003 Elecronics and Communications in Japan Part 2. 86 386
[25]	Itoh A, Matsunami H 1997 Physica Status Solidi A-Applied Research. 162 389
[26]	Hatayama T, Kawahito H, Kijima H, Uraoka Y, Fuyuki T 2002 Mater. Sci. Forum. 389-393 925
[27]	Roccaforte F, Via L, Raineri F, Musumeci V, Calcagno P, Condorelli L G G 2003 Appl. Phys. A: Mat. Sci. & Proc. 77 827
[28]	Lee S K, Zetterling C M, Östling M 2000 J. Appl. Phys. 87 8039

[1]	朱文璐, 郭红霞, 李洋帆, 马武英, 张凤祁, 白如雪, 钟向丽, 李济芳, 曹彦辉, 琚安安. 双沟槽SiC MOSFET总剂量效应. 物理学报, 2025, 74(5): 056101. doi: 10.7498/aps.74.20241641
[2]	贾晓菲, 魏群, 张文鹏, 何亮, 武振华. 10 nm金属氧化物半导体场效应晶体管中的热噪声特性分析. 物理学报, 2023, 72(22): 227303. doi: 10.7498/aps.72.20230661
[3]	田金朋, 王硕培, 时东霞, 张广宇. 垂直短沟道二硫化钼场效应晶体管. 物理学报, 2022, 71(21): 218502. doi: 10.7498/aps.71.20220738
[4]	张鸿, 郭红霞, 潘霄宇, 雷志峰, 张凤祁, 顾朝桥, 柳奕天, 琚安安, 欧阳晓平. 重离子在碳化硅中的输运过程及能量损失. 物理学报, 2021, 70(16): 162401. doi: 10.7498/aps.70.20210503
[5]	申帅帅, 贺朝会, 李永宏. 质子在碳化硅中不同深度的非电离能量损失. 物理学报, 2018, 67(18): 182401. doi: 10.7498/aps.67.20181095
[6]	范敏敏, 徐静平, 刘璐, 白玉蓉, 黄勇. 高k栅介质GeOI金属氧化物半导体场效应管阈值电压和亚阈斜率模型及其器件结构设计. 物理学报, 2014, 63(8): 087301. doi: 10.7498/aps.63.087301
[7]	辛艳辉, 刘红侠, 范小娇, 卓青青. 单Halo全耗尽应变Si 绝缘硅金属氧化物半导体场效应管的阈值电压解析模型. 物理学报, 2013, 62(10): 108501. doi: 10.7498/aps.62.108501
[8]	辛艳辉, 刘红侠, 范小娇, 卓青青. 非对称Halo异质栅应变Si SOI MOSFET的二维解析模型. 物理学报, 2013, 62(15): 158502. doi: 10.7498/aps.62.158502
[9]	房超, 刘马林. 包覆燃料颗粒碳化硅层的Raman光谱研究. 物理学报, 2012, 61(9): 097802. doi: 10.7498/aps.61.097802
[10]	周耐根, 洪涛, 周浪. MEAM势与Tersoff势比较研究碳化硅熔化与凝固行为. 物理学报, 2012, 61(2): 028101. doi: 10.7498/aps.61.028101
[11]	刘兴辉, 张俊松, 王绩伟, 敖强, 王震, 马迎, 李新, 王振世, 王瑞玉. 基于非平衡Green函数理论的峰值掺杂-低掺杂漏结构碳纳米管场效应晶体管输运研究. 物理学报, 2012, 61(10): 107302. doi: 10.7498/aps.61.107302
[12]	曹磊, 刘红侠, 王冠宇. 异质栅全耗尽应变硅金属氧化物半导体模型化研究. 物理学报, 2012, 61(1): 017105. doi: 10.7498/aps.61.017105
[13]	李劲, 刘红侠, 李斌, 曹磊, 袁博. 高k栅介质应变Si SOI MOSFET的阈值电压解析模型. 物理学报, 2010, 59(11): 8131-8136. doi: 10.7498/aps.59.8131
[14]	张林, 韩超, 马永吉, 张义门, 张玉明. Ni/4H-SiC肖特基势垒二极管的γ射线辐照效应. 物理学报, 2009, 58(4): 2737-2741. doi: 10.7498/aps.58.2737
[15]	林涛, 陈治明, 李佳, 李连碧, 李青民, 蒲红斌. 6H碳化硅衬底上硅碳锗薄膜的生长特性研究. 物理学报, 2008, 57(9): 6007-6012. doi: 10.7498/aps.57.6007
[16]	栾苏珍, 刘红侠, 贾仁需, 蔡乃琼. 高k介质异质栅全耗尽SOI MOSFET二维解析模型. 物理学报, 2008, 57(6): 3807-3812. doi: 10.7498/aps.57.3807
[17]	李艳萍, 徐静平, 陈卫兵, 许胜国, 季峰. 考虑量子效应的短沟道MOSFET二维阈值电压模型. 物理学报, 2006, 55(7): 3670-3676. doi: 10.7498/aps.55.3670
[18]	汤晓燕, 张义门, 张玉明, 郜锦侠. 界面态电荷对n沟6H-SiC MOSFET场效应迁移率的影响. 物理学报, 2003, 52(4): 830-833. doi: 10.7498/aps.52.830
[19]	杨林安, 张义门, 于春利, 张玉明. SiC功率金属-半导体场效应管的陷阱效应模型. 物理学报, 2003, 52(2): 302-306. doi: 10.7498/aps.52.302
[20]	王剑屏, 郝跃, 彭军, 朱作云, 张永华. 蓝宝石衬底上异质外延生长碳化硅薄膜的研究. 物理学报, 2002, 51(8): 1793-1797. doi: 10.7498/aps.51.1793

计量

文章访问数: 7665
PDF下载量: 375
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板