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Tunable composite absorber with active frequency selective surface

Chen Qian Jiang Jian-Jun Bie Shao-Wei Wang Peng Liu Peng Xu Xin-Xin

Tunable composite absorber with active frequency selective surface

Chen Qian, Jiang Jian-Jun, Bie Shao-Wei, Wang Peng, Liu Peng, Xu Xin-Xin
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  • Based on the equivalent transmission line theory, a three-layer tunable composite absorber with active frequency selective surface (AFSS) is designed. The first layer is an AFSS substrate. The middle layer is an AFSS, which is composed of a frequency selective surface (FSS) and a PIN diode array. The third layer is an insulator. Reflectance measurement shows that the reflection characteristic of the absorber can be dynamically adjusted by adjusting the bias voltage of the PIN diode array. When the bias voltage is 5 V, the best absorption property is observed. Reflection coefficient is below -8 dB and -10 dB at the frequency bands of 5—15 GHz and 5.3—13 GHz, respectively. Replacing PIN diodes with surface mount device (SMD) resistors, the reliability of the above results is further verified.
    • Funds:
    [1]

    Yang G D, Kang Y, Meng Q J 2010 Applied Chemical Industry 39 584 (in Chinese)[杨国栋、康 永、孟前进 2010 应用化工 39 584]

    [2]

    Munk B A 2000 Frequency Selective Surfaces: Theory and Design (New York: Wiley-Interscience) pp1—25

    [3]

    Li X Q, Gao J S, Zhao J L, Sun L C 2008 Acta Phys. Sin. 57 3803 (in Chinese)[李小秋、高劲松、赵晶丽、孙连春 2008 物理学报 57 3803]

    [4]

    Li X Q, Feng X G, Gao J S 2008 Acta Phys. Sin. 57 3193 (in Chinese)[李小秋、冯晓国、高劲松 2008 物理学报 57 3193]

    [5]

    Jia H Y, Gao J S, Feng X G, Sun L C 2009 Acta Phys. Sin. 58 505 (in Chinese)[贾宏燕、高劲松、冯晓国、孙连春 2009 物理学报 58 505]

    [6]

    Fang C Y, Zhang S R, Lu J,Wang J B, Sun L C 2010 Acta Phys. Sin. 59 5023 (in Chinese)[方春易、张树仁、卢 俊、汪剑波、孙连春 2010 物理学报 59 5023]

    [7]

    Liu H T, Cheng H F, Chu Z Y, Cao Y 2005 Materials Review 19 30 (in Chinese)[刘海韬、程海峰、楚增勇、曹 义 2005 材料导报 19 30]

    [8]

    Lu J, Chen X Y, Wang J B 2008 Acta Phys. Sin. 57 7200 (in Chinese) [卢 俊、陈新邑、汪剑波 2008 物理学报 57 7200]

    [9]

    Nie Y, Feng Z K, Zhang X C, He H H 2004 Journal of Huazhong University of Science and Technology: Natural Science 32 50 (in Chinese)[聂 彦、冯则坤、张秀成、何华辉 2004 华中科技大学学报(自然科学版) 32 50]

    [10]

    Ucar M H B, Sondas A, Erdemli Y E 2008 Progress in Electromagnetics Research B 6 65

    [11]

    Mias C 2003 Electron. Lett. 39 724

    [12]

    Martynyuk A E, Lopez J I M, Martynyuk N A 2005 Electron. Lett. 41 2

    [13]

    Tennant A, Chambers B 2004 IEEE Microwave and Wireless Components Letters 14 46

    [14]

    Tennant A, Chambers B 2004 Smart Mater. Struct. 13 122

    [15]

    Tennant A, Chambers B 2009 IEEE T. Antenn. Propag. 57 808

    [16]

    Wu R X, Chen P 2004 Acta Phys. Sin. 53 2915 (in Chinese)[伍瑞新、陈 平 2004 物理学报 53 2915]

    [17]

    Wu R X, Wang X Y, Qian J, Zhang M X, Zhu H F, Xu P H 2004 Acta Phys. Sin. 53 745 (in Chinese)[伍瑞新、王相元、钱 鉴、张明雪、朱航飞、徐培华 2004 物理学报 53 745]

  • [1]

    Yang G D, Kang Y, Meng Q J 2010 Applied Chemical Industry 39 584 (in Chinese)[杨国栋、康 永、孟前进 2010 应用化工 39 584]

    [2]

    Munk B A 2000 Frequency Selective Surfaces: Theory and Design (New York: Wiley-Interscience) pp1—25

    [3]

    Li X Q, Gao J S, Zhao J L, Sun L C 2008 Acta Phys. Sin. 57 3803 (in Chinese)[李小秋、高劲松、赵晶丽、孙连春 2008 物理学报 57 3803]

    [4]

    Li X Q, Feng X G, Gao J S 2008 Acta Phys. Sin. 57 3193 (in Chinese)[李小秋、冯晓国、高劲松 2008 物理学报 57 3193]

    [5]

    Jia H Y, Gao J S, Feng X G, Sun L C 2009 Acta Phys. Sin. 58 505 (in Chinese)[贾宏燕、高劲松、冯晓国、孙连春 2009 物理学报 58 505]

    [6]

    Fang C Y, Zhang S R, Lu J,Wang J B, Sun L C 2010 Acta Phys. Sin. 59 5023 (in Chinese)[方春易、张树仁、卢 俊、汪剑波、孙连春 2010 物理学报 59 5023]

    [7]

    Liu H T, Cheng H F, Chu Z Y, Cao Y 2005 Materials Review 19 30 (in Chinese)[刘海韬、程海峰、楚增勇、曹 义 2005 材料导报 19 30]

    [8]

    Lu J, Chen X Y, Wang J B 2008 Acta Phys. Sin. 57 7200 (in Chinese) [卢 俊、陈新邑、汪剑波 2008 物理学报 57 7200]

    [9]

    Nie Y, Feng Z K, Zhang X C, He H H 2004 Journal of Huazhong University of Science and Technology: Natural Science 32 50 (in Chinese)[聂 彦、冯则坤、张秀成、何华辉 2004 华中科技大学学报(自然科学版) 32 50]

    [10]

    Ucar M H B, Sondas A, Erdemli Y E 2008 Progress in Electromagnetics Research B 6 65

    [11]

    Mias C 2003 Electron. Lett. 39 724

    [12]

    Martynyuk A E, Lopez J I M, Martynyuk N A 2005 Electron. Lett. 41 2

    [13]

    Tennant A, Chambers B 2004 IEEE Microwave and Wireless Components Letters 14 46

    [14]

    Tennant A, Chambers B 2004 Smart Mater. Struct. 13 122

    [15]

    Tennant A, Chambers B 2009 IEEE T. Antenn. Propag. 57 808

    [16]

    Wu R X, Chen P 2004 Acta Phys. Sin. 53 2915 (in Chinese)[伍瑞新、陈 平 2004 物理学报 53 2915]

    [17]

    Wu R X, Wang X Y, Qian J, Zhang M X, Zhu H F, Xu P H 2004 Acta Phys. Sin. 53 745 (in Chinese)[伍瑞新、王相元、钱 鉴、张明雪、朱航飞、徐培华 2004 物理学报 53 745]

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    [8] Chen Ming-Dong, Jie Xiao-Hua, Zhang Hai-Yan. Simulation and calculation of the absorbing microwave properties of carbon nanotube composite coating. Acta Physica Sinica, 2014, 63(6): 066103. doi: 10.7498/aps.63.066103
    [9] Wang Hong-Chang, Wang Zhan-Shan, Li Fo-Sheng, Qin Shu-Ji, Du Yun, Wang Li, Zhang Zhong, Chen Ling-Yan. Analysis of the reflective performance of EUV multilayer under the influence of capping layer. Acta Physica Sinica, 2004, 53(7): 2368-2372. doi: 10.7498/aps.53.2368
    [10] Huang Yun-Hua, Yu Hai-Bo, Wang Jian, Li Hui-Feng, Zhang Yue. Microwave absorbing properties of composite coating by carbon nanotube and nanoscaled tetrapod-shaped ZnO. Acta Physica Sinica, 2010, 59(3): 1946-1951. doi: 10.7498/aps.59.1946
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Publishing process
  • Received Date:  29 July 2010
  • Accepted Date:  05 November 2010
  • Published Online:  15 July 2011

Tunable composite absorber with active frequency selective surface

  • 1. Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China

Abstract: Based on the equivalent transmission line theory, a three-layer tunable composite absorber with active frequency selective surface (AFSS) is designed. The first layer is an AFSS substrate. The middle layer is an AFSS, which is composed of a frequency selective surface (FSS) and a PIN diode array. The third layer is an insulator. Reflectance measurement shows that the reflection characteristic of the absorber can be dynamically adjusted by adjusting the bias voltage of the PIN diode array. When the bias voltage is 5 V, the best absorption property is observed. Reflection coefficient is below -8 dB and -10 dB at the frequency bands of 5—15 GHz and 5.3—13 GHz, respectively. Replacing PIN diodes with surface mount device (SMD) resistors, the reliability of the above results is further verified.

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