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Magnetotransport property of HgCdTe inversion layer

Gao Kuang-Hong Wei Lai-Ming Yu Guo-Lin Yang Rui Lin Tie Wei Yan-Feng Yang Jian-Rong Sun Lei Dai Ning Chu Jun-Hao

Magnetotransport property of HgCdTe inversion layer

Gao Kuang-Hong, Wei Lai-Ming, Yu Guo-Lin, Yang Rui, Lin Tie, Wei Yan-Feng, Yang Jian-Rong, Sun Lei, Dai Ning, Chu Jun-Hao
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  • HgCdTe-based metal-insulator-semiconductor field effect transistor is fabricated by low-cost liquid phase epitaxy technique. Clear SdH oscillation in xx and quantum Hall plateaus of xy are observed, indicating that it is a good transistor. By measuring the magnetoresistance near zero field, we observe the weak antilocalization effect in our sample, suggesting a relatively strong spin-orbit coupling. The experimental data can be well fitted by the ILP theory. The fitting-obtained spin-splitting energy increases with increasing electron concentration, and the maximum reaches up to 9.06 meV. From the obtained spin-splitting energy, we calculate the spin-orbit coupling parameter and find that it increases with increasing electron concentration, which is contrary to the observations in a wide quantum well.
    • Funds: Project supported by the Major State Basic Research (Grant No. 2007CB924901), the National Natural Science Foundation of China (Grant No. 60976093), the China Postdoctoral Science Foundation (Grant No. 20100480033), the Innovation Program of Shanghai Institute of Technical Physics (Grant No. Q-ZY-5), and the Science and Technology Commission of Shanghai (Grant No. 09JC1415700).
    [1]

    Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, Molnar S V, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488

    [2]

    Knap W, Skierbiszewski C, Zduniak A, Litwin-Staszewska E, Bertho D, Kobbi F, Robert J L, Pikus G E, Pikus F G, Iordanskii S V, Mosser V, Zekentes K, Lyanda-Geller Y B 1996 Phys. Rev. B 53 3912

    [3]

    Qiu Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H 2004 Acta Phys. Sin. 53 1977 (in Chinese) [仇志军, 桂永胜, 疏小舟, 戴宁, 郭少令, 褚君浩 2004 物理学报 53 1977]

    [4]

    Qiu Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H 2004 Acta Phys. Sin. 53 1186 (in Chinese) [仇志军, 桂永胜, 疏小舟, 戴宁, 郭少令, 褚君浩 2004 物理学报 53 1186]

    [5]

    Koga T, Nitta J, Akazaki T, Takayanagi H 2002 Phys. Rev. Lett. 89 046801

    [6]

    Kurdak C, Biyikli N, Ozgur U, Morkoc H, Litvinov 2006 Phys. Rev. B 74 113308

    [7]

    Gao K H, Yu G L, Zhou Y M, Zhou W Z, Lin T, Chu J H, Dai N, Austing D G, Gu Y, Zhang Y G 2009 Phys. Rev. B 79 085310

    [8]

    Hinz J, Buhmann H, Schafer M, Hock V, Becker C R, Molenkamp L W 2006 Semicond. Sci. Technol. 21 501

    [9]

    Bassom N J, Nicholas R J 1992 Semicond. Sci. Technol. 7 810

    [10]

    Belyaev A E, Beketov G V, Gorodnichii O P, Komirenko S M, Mukha L A 1993 Phys. Stat. Sol. (a) 135 253

    [11]

    van der Pauw L J 1958 Philips. Tech. Rev. 20 220

    [12]

    Shang L Y, Lin T, Zhou W Z, Li D L, Gao H L, Zeng Y P, Guo S L, Yu G L, Chu J H 2008 Acta Phys. Sin. 57 5232 (in Chinese) [商丽燕, 林铁, 周文政, 李东临, 高宏玲, 曾一平, 郭少令, 俞国林, 褚君浩 2008 物理学报 57 5232]

    [13]

    Buegt M, Karavolas V C, Peeters F M, Singleton J, Nicholas R J, Herlach F, Harris J J, Van Hove M, Borghs G 1995 Phys. Rev. B 52 12218

    [14]

    D’yakonov M I, Perel’ V I 1971 Sov. Phys. JETP 33 1053

    [15]

    Kallaher R L, Heremans 2009 Phys. Rev. B 79, 075322

    [16]

    Chen J, Qin H J, Yang F, Liu J, Guan T, Qu F M, Zhang G H, Shi J R, Xie X C, Yang C L, Wu K H, Li Y Q, Lu L, 2010 Phys. Rev. Lett. 105 176602

    [17]

    Chen J, He X Y, Wu K H, Ji Z Q, Lu L, Shi J R, Smet J H, Li Y Q arXiv:1104.0986

    [18]

    Zutic I, Fabian J, Das Sarma S 2004 Rev. Mod. Phys. 76 323

    [19]

    Litvinenko K L, Murdin B N, Allam J, Pidgeon C R, Zhang T, Harris J J, Cohen L F, Eustace D A, McComb D W 2006 Phys. Rev. B 74, 075331

    [20]

    Iordanskii S V, Lyanda-Geller Y B, Pikus G E 1994 JETP Lett. 60 206

    [21]

    Minkov G M, Germanenko A V, Rut O E, Sherstobitov A A, Golub L E, Zvonkov B N, Willander M 2004 Phys. Rev. B 70 155323

    [22]

    Pfeffer P, Zawadzki W 1999 Phys. Rev. B 59 R5321

    [23]

    Gui Y S, Becker C R, Dai N, Liu J, Qiu Z J, Novik E G, Schafer M, Shu X Z, Chu J H, Buhmann H, Molenkamp L W 2004 Phys. Rev. B 70 115328

    [24]

    Datta S, Das B 1990 Appl. Phys. Lett. 56 665

    [25]

    Nitta J, Akazaki T, Takayanagi H, Enoki T 1997 Phys. Rev. Lett. 78 1335

    [26]

    Guzenko V, Schapers T, Hardtdegen H 2007 Phys. Rev. B 76 165301

    [27]

    Yu G L, Dai N, Chu J H, Poole P J, Studenikin S A 2008 Phys. Rev. B 78 35304

    [28]

    Winkler R 2003 Spin-Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems (Berlin: Springer-Verlag)

    [29]

    Schapers T, Engels G, Lamge J, Klocke T, Hollfelder M, Luth H 1998 J. Appl. Phys. 83 4324

    [30]

    Nitta J, Bergsten T, Kunihashi Y, Kohda M 2009 J. Appl. Phys. 105 122402

    [31]

    Grundler D 2000 Phys. Rev. Lett. 84 6074

  • [1]

    Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, Molnar S V, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488

    [2]

    Knap W, Skierbiszewski C, Zduniak A, Litwin-Staszewska E, Bertho D, Kobbi F, Robert J L, Pikus G E, Pikus F G, Iordanskii S V, Mosser V, Zekentes K, Lyanda-Geller Y B 1996 Phys. Rev. B 53 3912

    [3]

    Qiu Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H 2004 Acta Phys. Sin. 53 1977 (in Chinese) [仇志军, 桂永胜, 疏小舟, 戴宁, 郭少令, 褚君浩 2004 物理学报 53 1977]

    [4]

    Qiu Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H 2004 Acta Phys. Sin. 53 1186 (in Chinese) [仇志军, 桂永胜, 疏小舟, 戴宁, 郭少令, 褚君浩 2004 物理学报 53 1186]

    [5]

    Koga T, Nitta J, Akazaki T, Takayanagi H 2002 Phys. Rev. Lett. 89 046801

    [6]

    Kurdak C, Biyikli N, Ozgur U, Morkoc H, Litvinov 2006 Phys. Rev. B 74 113308

    [7]

    Gao K H, Yu G L, Zhou Y M, Zhou W Z, Lin T, Chu J H, Dai N, Austing D G, Gu Y, Zhang Y G 2009 Phys. Rev. B 79 085310

    [8]

    Hinz J, Buhmann H, Schafer M, Hock V, Becker C R, Molenkamp L W 2006 Semicond. Sci. Technol. 21 501

    [9]

    Bassom N J, Nicholas R J 1992 Semicond. Sci. Technol. 7 810

    [10]

    Belyaev A E, Beketov G V, Gorodnichii O P, Komirenko S M, Mukha L A 1993 Phys. Stat. Sol. (a) 135 253

    [11]

    van der Pauw L J 1958 Philips. Tech. Rev. 20 220

    [12]

    Shang L Y, Lin T, Zhou W Z, Li D L, Gao H L, Zeng Y P, Guo S L, Yu G L, Chu J H 2008 Acta Phys. Sin. 57 5232 (in Chinese) [商丽燕, 林铁, 周文政, 李东临, 高宏玲, 曾一平, 郭少令, 俞国林, 褚君浩 2008 物理学报 57 5232]

    [13]

    Buegt M, Karavolas V C, Peeters F M, Singleton J, Nicholas R J, Herlach F, Harris J J, Van Hove M, Borghs G 1995 Phys. Rev. B 52 12218

    [14]

    D’yakonov M I, Perel’ V I 1971 Sov. Phys. JETP 33 1053

    [15]

    Kallaher R L, Heremans 2009 Phys. Rev. B 79, 075322

    [16]

    Chen J, Qin H J, Yang F, Liu J, Guan T, Qu F M, Zhang G H, Shi J R, Xie X C, Yang C L, Wu K H, Li Y Q, Lu L, 2010 Phys. Rev. Lett. 105 176602

    [17]

    Chen J, He X Y, Wu K H, Ji Z Q, Lu L, Shi J R, Smet J H, Li Y Q arXiv:1104.0986

    [18]

    Zutic I, Fabian J, Das Sarma S 2004 Rev. Mod. Phys. 76 323

    [19]

    Litvinenko K L, Murdin B N, Allam J, Pidgeon C R, Zhang T, Harris J J, Cohen L F, Eustace D A, McComb D W 2006 Phys. Rev. B 74, 075331

    [20]

    Iordanskii S V, Lyanda-Geller Y B, Pikus G E 1994 JETP Lett. 60 206

    [21]

    Minkov G M, Germanenko A V, Rut O E, Sherstobitov A A, Golub L E, Zvonkov B N, Willander M 2004 Phys. Rev. B 70 155323

    [22]

    Pfeffer P, Zawadzki W 1999 Phys. Rev. B 59 R5321

    [23]

    Gui Y S, Becker C R, Dai N, Liu J, Qiu Z J, Novik E G, Schafer M, Shu X Z, Chu J H, Buhmann H, Molenkamp L W 2004 Phys. Rev. B 70 115328

    [24]

    Datta S, Das B 1990 Appl. Phys. Lett. 56 665

    [25]

    Nitta J, Akazaki T, Takayanagi H, Enoki T 1997 Phys. Rev. Lett. 78 1335

    [26]

    Guzenko V, Schapers T, Hardtdegen H 2007 Phys. Rev. B 76 165301

    [27]

    Yu G L, Dai N, Chu J H, Poole P J, Studenikin S A 2008 Phys. Rev. B 78 35304

    [28]

    Winkler R 2003 Spin-Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems (Berlin: Springer-Verlag)

    [29]

    Schapers T, Engels G, Lamge J, Klocke T, Hollfelder M, Luth H 1998 J. Appl. Phys. 83 4324

    [30]

    Nitta J, Bergsten T, Kunihashi Y, Kohda M 2009 J. Appl. Phys. 105 122402

    [31]

    Grundler D 2000 Phys. Rev. Lett. 84 6074

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  • Received Date:  08 November 2010
  • Accepted Date:  10 May 2011
  • Published Online:  05 January 2012

Magnetotransport property of HgCdTe inversion layer

  • 1. Key Laboratory of Polar Materials and Devices of Ministry of Education, School of Science and Technology of Information, East China Normal University, Shanghai 200062, China;
  • 2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China;
  • 3. Key Laboratory of Infrared Imaging Material and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China
Fund Project:  Project supported by the Major State Basic Research (Grant No. 2007CB924901), the National Natural Science Foundation of China (Grant No. 60976093), the China Postdoctoral Science Foundation (Grant No. 20100480033), the Innovation Program of Shanghai Institute of Technical Physics (Grant No. Q-ZY-5), and the Science and Technology Commission of Shanghai (Grant No. 09JC1415700).

Abstract: HgCdTe-based metal-insulator-semiconductor field effect transistor is fabricated by low-cost liquid phase epitaxy technique. Clear SdH oscillation in xx and quantum Hall plateaus of xy are observed, indicating that it is a good transistor. By measuring the magnetoresistance near zero field, we observe the weak antilocalization effect in our sample, suggesting a relatively strong spin-orbit coupling. The experimental data can be well fitted by the ILP theory. The fitting-obtained spin-splitting energy increases with increasing electron concentration, and the maximum reaches up to 9.06 meV. From the obtained spin-splitting energy, we calculate the spin-orbit coupling parameter and find that it increases with increasing electron concentration, which is contrary to the observations in a wide quantum well.

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